JPS626664B2 - - Google Patents
Info
- Publication number
- JPS626664B2 JPS626664B2 JP53064557A JP6455778A JPS626664B2 JP S626664 B2 JPS626664 B2 JP S626664B2 JP 53064557 A JP53064557 A JP 53064557A JP 6455778 A JP6455778 A JP 6455778A JP S626664 B2 JPS626664 B2 JP S626664B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- oxide film
- substrate
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-AKLPVKDBSA-N silicon-31 atom Chemical compound [31Si] XUIMIQQOPSSXEZ-AKLPVKDBSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6455778A JPS54154979A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulated gate type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6455778A JPS54154979A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulated gate type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54154979A JPS54154979A (en) | 1979-12-06 |
| JPS626664B2 true JPS626664B2 (zh) | 1987-02-12 |
Family
ID=13261642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6455778A Granted JPS54154979A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulated gate type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54154979A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4503451A (en) * | 1982-07-30 | 1985-03-05 | Motorola, Inc. | Low resistance buried power bus for integrated circuits |
| JPH0750695B2 (ja) * | 1986-06-10 | 1995-05-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51151081A (en) * | 1975-06-20 | 1976-12-25 | Matsushita Electric Ind Co Ltd | Mos type semiconductor apparatus and that manufacturing method |
| JPS5310281A (en) * | 1976-07-15 | 1978-01-30 | Matsushita Electric Ind Co Ltd | Production of mos type semiconductor integrated circuit |
-
1978
- 1978-05-29 JP JP6455778A patent/JPS54154979A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51151081A (en) * | 1975-06-20 | 1976-12-25 | Matsushita Electric Ind Co Ltd | Mos type semiconductor apparatus and that manufacturing method |
| JPS5310281A (en) * | 1976-07-15 | 1978-01-30 | Matsushita Electric Ind Co Ltd | Production of mos type semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54154979A (en) | 1979-12-06 |
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