JPS6261668B2 - - Google Patents
Info
- Publication number
- JPS6261668B2 JPS6261668B2 JP24824583A JP24824583A JPS6261668B2 JP S6261668 B2 JPS6261668 B2 JP S6261668B2 JP 24824583 A JP24824583 A JP 24824583A JP 24824583 A JP24824583 A JP 24824583A JP S6261668 B2 JPS6261668 B2 JP S6261668B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- film
- opening
- tungsten
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 10
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 229910008938 W—Si Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24824583A JPS60145376A (ja) | 1983-12-30 | 1983-12-30 | タングステンシリサイド膜の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24824583A JPS60145376A (ja) | 1983-12-30 | 1983-12-30 | タングステンシリサイド膜の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60145376A JPS60145376A (ja) | 1985-07-31 |
| JPS6261668B2 true JPS6261668B2 (ko) | 1987-12-22 |
Family
ID=17175307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24824583A Granted JPS60145376A (ja) | 1983-12-30 | 1983-12-30 | タングステンシリサイド膜の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60145376A (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6326368A (ja) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Ｃｖｄ法 |
| JP2526039B2 (ja) * | 1986-07-18 | 1996-08-21 | 日本真空技術株式会社 | Ｃｖｄ法 |
| JPS6311669A (ja) * | 1986-06-30 | 1988-01-19 | Ulvac Corp | Ｃｖｄ法 |
| JPS6326369A (ja) * | 1986-07-19 | 1988-02-03 | Ulvac Corp | Ｃｖｄ法 |
| JP2526040B2 (ja) * | 1986-07-18 | 1996-08-21 | 日本真空技術株式会社 | Ｃｖｄ法 |
| JPS6311668A (ja) * | 1986-06-30 | 1988-01-19 | Ulvac Corp | Ｃｖｄ法 |
| JP2592844B2 (ja) * | 1987-07-10 | 1997-03-19 | 株式会社東芝 | 高融点金属膜の形成方法 |
| US5028565A (en) * | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
| JPH03223462A (ja) * | 1990-01-27 | 1991-10-02 | Fujitsu Ltd | タングステン膜の形成方法 |
| ATE143703T1 (de) * | 1990-06-26 | 1996-10-15 | Air Liquide | Verfahren zum herstellen selbsttragender formkörper aus feuerfestem metall |
-
1983
- 1983-12-30 JP JP24824583A patent/JPS60145376A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60145376A (ja) | 1985-07-31 |
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