JPS6261334B2 - - Google Patents

Info

Publication number
JPS6261334B2
JPS6261334B2 JP22300784A JP22300784A JPS6261334B2 JP S6261334 B2 JPS6261334 B2 JP S6261334B2 JP 22300784 A JP22300784 A JP 22300784A JP 22300784 A JP22300784 A JP 22300784A JP S6261334 B2 JPS6261334 B2 JP S6261334B2
Authority
JP
Japan
Prior art keywords
substrate
cooling
cooling gas
gas
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP22300784A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61103530A (ja
Inventor
Hiroshi Matsuo
Izumi Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP22300784A priority Critical patent/JPS61103530A/ja
Publication of JPS61103530A publication Critical patent/JPS61103530A/ja
Publication of JPS6261334B2 publication Critical patent/JPS6261334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP22300784A 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構 Granted JPS61103530A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22300784A JPS61103530A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22300784A JPS61103530A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Publications (2)

Publication Number Publication Date
JPS61103530A JPS61103530A (ja) 1986-05-22
JPS6261334B2 true JPS6261334B2 (enrdf_load_stackoverflow) 1987-12-21

Family

ID=16791362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22300784A Granted JPS61103530A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Country Status (1)

Country Link
JP (1) JPS61103530A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689444B2 (ja) * 1986-10-31 1994-11-09 東京エレクトロン株式会社 薄膜形成装置
JPH0772351B2 (ja) * 1986-12-01 1995-08-02 株式会社日立製作所 金属薄膜選択成長方法
JPH0713960B2 (ja) * 1986-12-23 1995-02-15 日本電気株式会社 ドライエッチング装置
JP2719332B2 (ja) * 1987-05-25 1998-02-25 株式会社日立製作所 プラズマ処理方法
JP2656658B2 (ja) * 1990-10-11 1997-09-24 株式会社日立製作所 試料温度制御方法及び真空処理装置
JPH05182930A (ja) * 1991-11-29 1993-07-23 Nichiden Mach Ltd ウェーハ冷却装置
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5416043A (en) * 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
JP3220619B2 (ja) * 1995-05-24 2001-10-22 松下電器産業株式会社 ガス伝熱プラズマ処理装置
JP2002050809A (ja) 2000-08-01 2002-02-15 Anelva Corp 基板処理装置及び方法
WO2011043063A1 (ja) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法
CN108847382B (zh) * 2018-06-26 2020-10-16 上海华力微电子有限公司 一种气压调节装置、气压调节方法及晶圆刻蚀设备

Also Published As

Publication number Publication date
JPS61103530A (ja) 1986-05-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term