JPS6260827B2 - - Google Patents
Info
- Publication number
- JPS6260827B2 JPS6260827B2 JP61197149A JP19714986A JPS6260827B2 JP S6260827 B2 JPS6260827 B2 JP S6260827B2 JP 61197149 A JP61197149 A JP 61197149A JP 19714986 A JP19714986 A JP 19714986A JP S6260827 B2 JPS6260827 B2 JP S6260827B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- semiconductor region
- bonding pad
- photosensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197149A JPS6276570A (ja) | 1986-08-25 | 1986-08-25 | ホトセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197149A JPS6276570A (ja) | 1986-08-25 | 1986-08-25 | ホトセンサ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12063879A Division JPS5645086A (en) | 1979-09-21 | 1979-09-21 | Photosensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276570A JPS6276570A (ja) | 1987-04-08 |
| JPS6260827B2 true JPS6260827B2 (enrdf_load_stackoverflow) | 1987-12-18 |
Family
ID=16369576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61197149A Granted JPS6276570A (ja) | 1986-08-25 | 1986-08-25 | ホトセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276570A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163868A (ja) * | 1992-09-28 | 1994-06-10 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体装置 |
| DE102007051752B4 (de) | 2007-10-30 | 2010-01-28 | X-Fab Semiconductor Foundries Ag | Licht blockierende Schichtenfolge und Verfahren zu deren Herstellung |
-
1986
- 1986-08-25 JP JP61197149A patent/JPS6276570A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6276570A (ja) | 1987-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7454917B2 (ja) | 光検出装置 | |
| WO2020121851A1 (ja) | 光検出装置 | |
| JP2004134514A (ja) | 裏面入射型撮像センサ | |
| JPH0799782B2 (ja) | 半導体光検出装置 | |
| JPS6260827B2 (enrdf_load_stackoverflow) | ||
| JPS6244706B2 (enrdf_load_stackoverflow) | ||
| JP3490959B2 (ja) | 受光素子及び受光モジュール | |
| JP3342291B2 (ja) | ホトダイオード内蔵集積回路 | |
| JP2998646B2 (ja) | 受光演算素子 | |
| JPH04241458A (ja) | 半導体光検出装置 | |
| WO2020121852A1 (ja) | 光検出装置 | |
| US20170256579A1 (en) | Semiconductor device having a light receiving element | |
| JPS60177685A (ja) | 半導体装置 | |
| JP3531283B2 (ja) | 日射センサ | |
| JP3831639B2 (ja) | 受光素子及び受光モジュール | |
| JPS622673A (ja) | 半導体受光装置 | |
| JPH09181290A (ja) | 受光素子内蔵半導体装置 | |
| JPH02304976A (ja) | 固体撮像素子 | |
| JPH0527990B2 (enrdf_load_stackoverflow) | ||
| JPS6244826B2 (enrdf_load_stackoverflow) | ||
| JPH05343729A (ja) | 配列型赤外線検知器 | |
| JP2832600B2 (ja) | 密着型イメージセンサ | |
| JPWO2023132001A5 (enrdf_load_stackoverflow) | ||
| JPS63131571A (ja) | 固体撮像素子 | |
| KR980012577A (ko) | 자기 초점기능을 갖는 직접조사방식 비접촉형 반도체 촬영소자 |