JPS6244706B2 - - Google Patents

Info

Publication number
JPS6244706B2
JPS6244706B2 JP54120638A JP12063879A JPS6244706B2 JP S6244706 B2 JPS6244706 B2 JP S6244706B2 JP 54120638 A JP54120638 A JP 54120638A JP 12063879 A JP12063879 A JP 12063879A JP S6244706 B2 JPS6244706 B2 JP S6244706B2
Authority
JP
Japan
Prior art keywords
light
semiconductor region
shielding film
photodiode
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54120638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645086A (en
Inventor
Shigeru Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12063879A priority Critical patent/JPS5645086A/ja
Publication of JPS5645086A publication Critical patent/JPS5645086A/ja
Publication of JPS6244706B2 publication Critical patent/JPS6244706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP12063879A 1979-09-21 1979-09-21 Photosensor Granted JPS5645086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12063879A JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12063879A JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61197149A Division JPS6276570A (ja) 1986-08-25 1986-08-25 ホトセンサ

Publications (2)

Publication Number Publication Date
JPS5645086A JPS5645086A (en) 1981-04-24
JPS6244706B2 true JPS6244706B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=14791165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12063879A Granted JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Country Status (1)

Country Link
JP (1) JPS5645086A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116779A (ja) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd 受光素子内蔵集積回路装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010671A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 固体撮像装置
JPS61127165A (ja) * 1984-11-24 1986-06-14 Sharp Corp 半導体装置
KR101016121B1 (ko) 2008-10-29 2011-02-17 경북대학교 산학협력단 스트립 광센서 및 이를 이용한 방사선 2차원 위치정보 및 에너지 검출장치
JP7412740B2 (ja) * 2019-12-13 2024-01-15 コーデンシ株式会社 半導体集積回路装置及び光センサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116779A (ja) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd 受光素子内蔵集積回路装置

Also Published As

Publication number Publication date
JPS5645086A (en) 1981-04-24

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