JPS6259253B2 - - Google Patents
Info
- Publication number
- JPS6259253B2 JPS6259253B2 JP214678A JP214678A JPS6259253B2 JP S6259253 B2 JPS6259253 B2 JP S6259253B2 JP 214678 A JP214678 A JP 214678A JP 214678 A JP214678 A JP 214678A JP S6259253 B2 JPS6259253 B2 JP S6259253B2
- Authority
- JP
- Japan
- Prior art keywords
- diffraction
- ray
- sample
- collimator
- monochrome
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002441 X-ray diffraction Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 2
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910016523 CuKa Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP214678A JPS5495286A (en) | 1978-01-11 | 1978-01-11 | Xxray diffractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP214678A JPS5495286A (en) | 1978-01-11 | 1978-01-11 | Xxray diffractor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5495286A JPS5495286A (en) | 1979-07-27 |
| JPS6259253B2 true JPS6259253B2 (enrdf_load_stackoverflow) | 1987-12-10 |
Family
ID=11521201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP214678A Granted JPS5495286A (en) | 1978-01-11 | 1978-01-11 | Xxray diffractor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5495286A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2620106B2 (ja) * | 1988-04-22 | 1997-06-11 | 理学電機 株式会社 | 薄膜試料のx線回折極点図形観測装置 |
| JP5546152B2 (ja) * | 2009-04-14 | 2014-07-09 | キヤノン株式会社 | 記録材表面検出装置及びそれを備える画像形成装置 |
-
1978
- 1978-01-11 JP JP214678A patent/JPS5495286A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5495286A (en) | 1979-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Rozgonyi et al. | X‐Ray Determination of Stresses in Thin Films and Substrates by Automatic Bragg Angle Control | |
| KR920008464A (ko) | 근접 리소그래픽 시스템의 횡축 위치 측정장치 및 방법 | |
| JP6230618B2 (ja) | 面内斜入射回折を用いた表面マッピングのための装置、および、方法 | |
| JP3976292B2 (ja) | X線トポグラフィ装置 | |
| US20050117699A1 (en) | X-ray imaging apparatus and x-ray imaging method | |
| JP3968350B2 (ja) | X線回折装置及び方法 | |
| JPS6259253B2 (enrdf_load_stackoverflow) | ||
| JP2000213999A (ja) | X線応力測定方法 | |
| US3816747A (en) | Method and apparatus for measuring lattice parameter | |
| SU1226209A1 (ru) | Рентгенографический способ вы влени дефектов структуры кристаллов | |
| JP3502182B2 (ja) | 非破壊検査測定装置 | |
| JPH05288616A (ja) | X線残留応力測定方法 | |
| JPH02266249A (ja) | 結晶面のx線回折測定方法 | |
| JP2921597B2 (ja) | 全反射スペクトル測定装置 | |
| JP2001267235A (ja) | 露光装置及びその露光装置におけるフォトマスクの位置合わせ方法 | |
| JP3380921B2 (ja) | 結晶中のひずみの測定方法 | |
| GB2292658A (en) | Compact X-ray diffraction micrograph device | |
| JPH0344544A (ja) | 結晶基板の内部歪み測定方法 | |
| JP2848874B2 (ja) | コンタクトホール開口検査方法 | |
| SU1622803A1 (ru) | Способ определени степени нарушенности поверхности или объема монокристаллических пластин | |
| JP2567840B2 (ja) | 結晶方位決定装置 | |
| SU542128A1 (ru) | Способ рентгенографического исследовани структуры кристаллов | |
| SU362233A1 (ru) | ВСЕСОЮЗНАЯ1В. Ф. Миусков, А. В. Миренский и Ю. Н. Шилинбюро института кристаллографии АН СССРnATEKTHO-TCXIHfVEGKAl | |
| JPH076929B2 (ja) | 全反射螢光exafs装置 | |
| JPS59171810A (ja) | 単結晶ウエ−ハ反り測定装置 |