JPS6258668B2 - - Google Patents

Info

Publication number
JPS6258668B2
JPS6258668B2 JP57221217A JP22121782A JPS6258668B2 JP S6258668 B2 JPS6258668 B2 JP S6258668B2 JP 57221217 A JP57221217 A JP 57221217A JP 22121782 A JP22121782 A JP 22121782A JP S6258668 B2 JPS6258668 B2 JP S6258668B2
Authority
JP
Japan
Prior art keywords
circuit section
semiconductor substrate
section
analog circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57221217A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59111357A (ja
Inventor
Takashi Yamazaki
Takeshi Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57221217A priority Critical patent/JPS59111357A/ja
Publication of JPS59111357A publication Critical patent/JPS59111357A/ja
Publication of JPS6258668B2 publication Critical patent/JPS6258668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57221217A 1982-12-17 1982-12-17 Ｃ−ｍｏｓ集積回路とその使用方法 Granted JPS59111357A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57221217A JPS59111357A (ja) 1982-12-17 1982-12-17 Ｃ−ｍｏｓ集積回路とその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57221217A JPS59111357A (ja) 1982-12-17 1982-12-17 Ｃ−ｍｏｓ集積回路とその使用方法

Publications (2)

Publication Number Publication Date
JPS59111357A JPS59111357A (ja) 1984-06-27
JPS6258668B2 true JPS6258668B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=16763295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57221217A Granted JPS59111357A (ja) 1982-12-17 1982-12-17 Ｃ−ｍｏｓ集積回路とその使用方法

Country Status (1)

Country Link
JP (1) JPS59111357A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139770U (enrdf_load_stackoverflow) * 1989-04-26 1990-11-21
JPH0593852U (ja) * 1991-12-20 1993-12-21 株式会社ビビッド 表装電話帳

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564894B2 (ja) * 1988-06-28 1996-12-18 日本電気株式会社 半導体集積回路装置
JP3918220B2 (ja) * 1997-02-27 2007-05-23 ソニー株式会社 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139770U (enrdf_load_stackoverflow) * 1989-04-26 1990-11-21
JPH0593852U (ja) * 1991-12-20 1993-12-21 株式会社ビビッド 表装電話帳

Also Published As

Publication number Publication date
JPS59111357A (ja) 1984-06-27

Similar Documents

Publication Publication Date Title
GB1584056A (en) Logic circuit using cmos transistors
JPS54157092A (en) Semiconductor integrated circuit device
JPS6258668B2 (enrdf_load_stackoverflow)
JPS5753944A (en) Semiconductor integrated circuit
JPS56110264A (en) High withstand voltage mos transistor
JPH09500761A (ja) 半導体素子に使用される寄生的ｍｏｓトランジスタを有するパッド構造
JPS5937858B2 (ja) 半導体装置およびその製法
JPS6236395B2 (enrdf_load_stackoverflow)
JPH01268049A (ja) 拡散抵抗素子
JPS54128295A (en) Mis-type semiconductor integrated circuit device
JPS5923569A (ja) 半導体可変容量素子
JPS585006A (ja) 白色雑音を発生させる方法
KR850005159A (ko) 기판에 전원 공급 통로를 가진 반도체 집적회로
JPS5710247A (en) Semiconductor device
JPS61283170A (ja) Ｍｏｓ集積回路装置
KR970013431A (ko) 모스형 반도체 커패시터
JPH03108373A (ja) 半導体装置
JPS55140261A (en) Substrate potential generator
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5563863A (en) Semiconductor integrated circuit
JPS5850426B2 (ja) 自己基板バイアスレベルの安定化方法
JPS57211741A (en) Semiconductor device
JPS55128864A (en) Semiconductor device
JPS60103672A (ja) 半導体装置
KR970053904A (ko) 반도체 소자의 구조