JPS6258226A - Liquid crystal display body - Google Patents
Liquid crystal display bodyInfo
- Publication number
- JPS6258226A JPS6258226A JP60199131A JP19913185A JPS6258226A JP S6258226 A JPS6258226 A JP S6258226A JP 60199131 A JP60199131 A JP 60199131A JP 19913185 A JP19913185 A JP 19913185A JP S6258226 A JPS6258226 A JP S6258226A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- rubbing
- crystal display
- conductive portion
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分計〕
本発明は、ＭＩＭｅ＆Ｃ代表されるバリスター素子をス
イッチングに利用し九液晶表示体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a liquid crystal display using a varistor element represented by MIMe&C for switching.
本発明は、Ｍ工Ｍを形成された絶縁基板上の画素のラビ
ング材進入方向側に、導電部分若しくは、該導電部分上
に誘電体層を形成することＫより、→ピング材が該絶縁
基板上を擦る際に発生するラビング材表面の電荷が該導
電部分若しくは該導電部分上に形成された誘電体層に放
出され、画素に接続されたＭ工Ｍ素子の絶縁膜が保護さ
れる。一方、画−葉面をラビングする際には、画素は導
電体数、摩擦によろ電荷の蓄積は起こらない。かくして
ラビング作業時に発生するＭＩＭ素子の静電気破壊を防
止し、液晶表示体点灯の際の係る原因による異常表示す
なわち点灯欠陥の発生を防止できる。In the present invention, a conductive portion or a dielectric layer is formed on the conductive portion on the insulating substrate on which the M process M is formed, on the side of the pixel in which the rubbing material enters. Charges generated on the surface of the rubbing material during rubbing are released to the conductive portion or a dielectric layer formed on the conductive portion, thereby protecting the insulating film of the M element connected to the pixel. On the other hand, when the picture surface is rubbed, no charge is accumulated in the pixels due to the number of conductors and friction. In this way, electrostatic damage to the MIM element that occurs during the rubbing operation can be prevented, and abnormal display, that is, lighting defects due to such causes when the liquid crystal display is turned on can be prevented.
従来のＭＩＭ素子を用いた液晶表示体は、特開昭５９−
８５）９０記載の第８図、特開昭５９−７８５８６記載
の第１図、及び特開昭５９−５５８８７記載の第１図に
示す様な、画素パターンが知られていた。A liquid crystal display using a conventional MIM element is disclosed in Japanese Patent Application Laid-open No. 1983-
85) Pixel patterns as shown in FIG. 8 described in 1990, FIG. 1 described in JP-A-59-78586, and FIG. 1 described in JP-A-59-55887 were known.
〔発明が解決しようとする問題点及び目的〕しかし従来
技術では、液晶の配向処理にラビングを用いた場合にラ
ビング材が摩擦たより帯電し、Ｍ工Ｍ等の電気的耐圧の
低い素子はラビング材の電荷が放出された際、素子を形
成する絶縁膜の一部がジュール熱により破損し、スイッ
チング特性が失なわれ、点灯欠陥が発生するという問題
点を有する。一方素子の電気的耐圧を高めるＫは、絶縁
膜の材質、膜厚、パターン幅等を変更すれば良いが、素
子特性も変化し液晶の駆動電圧等の制約もあって難しい
。液晶の配向処理としては、液晶のティルト角ψを極力
小さく保ち点灯の際コン−トラストを高めることと、製
造効率を考暉するとラビングによる処理が最も適当であ
る。[Problems and objects to be solved by the invention] However, in the prior art, when rubbing is used to align liquid crystals, the rubbing material is charged due to friction, and elements with low electrical withstand voltage such as M When this charge is released, a part of the insulating film forming the element is damaged by Joule heat, causing a problem in that switching characteristics are lost and lighting defects occur. On the other hand, K, which increases the electrical breakdown voltage of the device, can be achieved by changing the material, thickness, pattern width, etc. of the insulating film, but this is difficult because the device characteristics also change and there are restrictions such as the drive voltage of the liquid crystal. The most appropriate alignment treatment for the liquid crystal is to keep the tilt angle ψ of the liquid crystal as small as possible to increase the contrast during lighting, and in consideration of manufacturing efficiency, the most appropriate treatment is rubbing.
そこで本発明は係る問題点を解決するもので、その目的
とするところはＭ工Ｍ等を内蔵した液晶表示体の効率生
産にある。SUMMARY OF THE INVENTION The present invention is intended to solve these problems, and its purpose is to efficiently produce a liquid crystal display body incorporating M/M and the like.
本発明の液晶表示“体は、液晶層を支持する２枚の絶縁
基板の少なくとも一方の絶縁基＠υ液晶層と接する基板
面上に、ＭＴＭ素子を形成し、該素子を用いて液晶１−
の印加電圧を制御する機構を有する液晶表示体に於いて
、ラビング作業時にラビング材が最初に接する、Ｍ工Ｍ
素子が形成された画素のラビング材の進入方向側に導電
部分含有すること若しくは該導電部分を画像の有効表示
面を構成する画素最外周に有すること、及び該導電部分
がＭＩＭ形成金属の少なくとも１つＫより形成されてい
ること若しくは該導電部分が画素形成金属と同一金属で
形成されていること並びに該導電部分上にｍｓ体層を有
すること′ｔ−特徴とする。In the liquid crystal display body of the present invention, an MTM element is formed on the surface of at least one of the two insulating substrates supporting the liquid crystal layer, which is in contact with the insulating base@υ liquid crystal layer, and the MTM element is used to form the liquid crystal display.
In a liquid crystal display having a mechanism for controlling the applied voltage of
A conductive portion is contained on the side of the pixel in which the element is formed in the direction of entry of the rubbing material, or the conductive portion is provided at the outermost periphery of the pixel that constitutes the effective display surface of the image, and the conductive portion is at least one of the MIM forming metals. The conductive portion is made of the same metal as the pixel forming metal, and the conductive portion has an MS layer on the conductive portion.
以下、本発明について実施例に基づいて詳細に説明する
。第１図は本発明に基づ（ＭＩＭ液晶表示体υＭ工Ｍ素
子が形成され友絶縁基板のパターン図であるが、１．が
該導電部分を示し、ラビング材の進入方向側に形成して
いる。ラビング方向が図中で上下方向若しくは左右方向
の場合は、ラビング材進入方向の画像の有効表示面の一
辺のみに該導電部分を形成し、静電気によるＭ工Ｍ素子
の破壊を防止できた。Hereinafter, the present invention will be described in detail based on examples. FIG. 1 is a pattern diagram of an insulating substrate on which a MIM liquid crystal display υM element is formed based on the present invention. When the rubbing direction is vertical or horizontal in the figure, the conductive portion is formed only on one side of the effective display surface of the image in the direction in which the rubbing material enters, making it possible to prevent destruction of the M element due to static electricity. .
第２図はラビング方向が図中で斜め方向からの場合全表
し、該導電部分をラビング方向の角を挾む二辺に形成す
ることにより同様の効果を得た。FIG. 2 shows the entire case where the rubbing direction is diagonal in the figure, and the same effect was obtained by forming the conductive portions on two sides sandwiching the corner of the rubbing direction.
第５図は画像の有効表示面を構成する画素最外周に誼導
電部分を形成し友もので、仁の場合は、あらゆる角度か
らのラビングに対し、同様の効果を得た。 −
ところで該導電部分の材質であるが、本実施例ではＭＩ
Ｍ素子を形成する金ＪＩ！４りしてタンタル、及びこれ
を陽極酸化して得る五酸化タンタル、この五酸化タンタ
ル上にクロムを蒸着若しくはスパッタし、タンタル、ク
ロムの各々を用いて該導電部分を形成した。一方画素材
質である工Ｔｏを用いて該導電部分を形成した。両者共
に材質に関係なく、同様の効果が確−できた。FIG. 5 shows a method in which a conductive portion is formed on the outermost periphery of each pixel constituting the effective display surface of an image, and in the case of Rin, similar effects were obtained by rubbing from all angles. - By the way, regarding the material of the conductive part, in this example, MI
Gold JI forming M element! The conductive portion was formed using tantalum and chromium, respectively, by vapor depositing or sputtering chromium on tantalum pentoxide obtained by anodizing tantalum and tantalum pentoxide. On the other hand, the conductive portion was formed using To, which is a picture material material. In both cases, similar effects were achieved regardless of the material.
さてタンタルを該導電部分に用いた際、前述の場合は端
子との電気的接続はされていないが、熾子と電気的接続
をした場合について次に述べる。Now, when tantalum is used for the conductive portion, it is not electrically connected to the terminal in the above case, but the case where it is electrically connected to the tantalum will be described below.
このよう゛な場合、該導電部分も陽極酸化工程で素子部
同様に酸化され五酸化タンタルという誘電体層が２００
０Ｘ以下の膜厚で形成される、すなわち該導電部分上Ｆ
ｃ鍔電電体層存在する場合だが、係す場合に於いても全
く同様の効果が確認できた。In such a case, the conductive part is also oxidized in the anodizing process in the same way as the element part, and the dielectric layer of tantalum pentoxide is
formed with a film thickness of 0X or less, that is, F on the conductive part
The same effect was confirmed even in the case where the electric conductor layer was present.
ラビング作業前に基板表面１）ＣＰＸ膜を形成するがこ
のＰＩ膜も誘電体層と考えることができ、係る場合に於
いても全く問題なく同様の効果を得た。Before the rubbing operation, 1) a CPX film was formed on the substrate surface, but this PI film can also be considered as a dielectric layer, and in this case, the same effect was obtained without any problem.
これら一連の！ｉＩ！施例は、Ｍ工Ｍ素子が形成された
絶縁基板の完成後、アミノシラン処理、Ｐ１膜形成した
後、ラビングにより配向させた。セル完成後点灯させ欠
陥ｔｌＩＩＩＮシたのであるが、ラビング時のＭ工Ｍ素
子の静電気による破壊に起因する点灯欠陥は、ラビング
材進入方向に最も近い画素に接続されたＭＩＭＫ集中的
に発生し、外観上、長さのまちまちな線状の特徴的表示
状態を呈するので、本実施例に基づく効果の確認は容易
である。A series of these! iI! In the example, after the insulating substrate on which the M element was formed was completed, it was treated with aminosilane, a P1 film was formed, and then it was oriented by rubbing. After the cell was completed, the cell was turned on and defects were detected. However, the lighting defects caused by the destruction of the M element during rubbing due to static electricity occurred concentratedly in the MIMK connected to the pixel closest to the direction in which the rubbing material entered. Since the appearance shows a characteristic display state of lines of varying lengths, it is easy to confirm the effect based on this embodiment.
以上述べたように、本発明によれば、ラビング作業時に
必然的に発生する静電気が、画像Ｖ有効表示面′ｔ−構
成する画素に印加される前に、その画素のラビング材側
に形成した導電部分で放出されるので、ＭＩＭ素子の静
電気による破壊を防止できる。すなわち、ラビングとい
う液晶表示体を製造する上で、斜め蒸着法に比較してコ
ントラストが高く、生産効率の高い配向方法を用いてＭ
ＩＭ等を内蔵した液晶表示体ができる訳で、現在主流の
Ｔ ＰＴｆ＆晶表示体に比較して、より安価に同等水準
の性能をもつ液晶表示体の効率生産を可能にするもので
ある。As described above, according to the present invention, static electricity that is inevitably generated during the rubbing operation is formed on the rubbing material side of the pixel before being applied to the pixel constituting the effective display surface of the image V't. Since it is emitted from the conductive part, damage to the MIM element due to static electricity can be prevented. In other words, when manufacturing liquid crystal displays, rubbing is an alignment method that has higher contrast and higher production efficiency than the oblique vapor deposition method.
A liquid crystal display with a built-in IM etc. can be produced, making it possible to efficiently produce a liquid crystal display with the same level of performance at a lower cost than the currently mainstream TPTf&crystal display.
第１図は本発明に基づく、ラビング方向が左からの場合
のパターン図ヲ示す。
第２図は本発明に基づく、ラビング方向が左上からの斜
めの場合のパターン図を示す。
第５図は本発明に基づく、画素最外周にパターンを形成
し九場合のパターン図を示す。
１・・・導電部分若しくは該導電部分上に形成された＃
電体ｔ―
２・・・熾子
５・・・画素
４…ＭＩＭ素子
以 上
ＭＴＦ／Ｘ雇工表ホイ年を極Ｉマ？−ン１刀第１図
ＭＵＭシ＆品２表ホ評を極Ｉマ？−ン１カ第２１）FIG. 1 shows a pattern diagram when the rubbing direction is from the left according to the present invention. FIG. 2 shows a pattern diagram when the rubbing direction is diagonal from the upper left corner according to the present invention. FIG. 5 shows a pattern diagram of nine cases in which a pattern is formed on the outermost periphery of a pixel according to the present invention. 1... Conductive portion or # formed on the conductive portion
Electric body t- 2...Shiko 5...Pixel 4...MIM element or more MTF/X employment table Hui year is extremely Ima? -N1 sword 1st picture MUM & product 2nd table review to the extreme Ima? -N1 Ka No. 21)
Claims (5)
方の絶縁基板の液晶層と接する基板面上に、ＭＩＭ素子
を形成し、該素子を用いて液晶層の印加電圧を制御する
機構を有する液晶表示体に於いて、ラビング作業時にラ
ビング材が最初に接するところの、ＭＩＭ素子が形成さ
れた画素のラビング材の進入方向側に導電部分を有する
ことを特徴とする液晶表示体。(1) A mechanism is provided in which an MIM element is formed on the surface of at least one of the two insulating substrates supporting the liquid crystal layer, which is in contact with the liquid crystal layer, and the element is used to control the voltage applied to the liquid crystal layer. 1. A liquid crystal display comprising a conductive portion on the side in which the rubbing material enters a pixel in which an MIM element is formed, which is the first contact with the rubbing material during a rubbing operation.
外周に有することを特徴とする特許請求の範囲第１項記
載の液晶表示体。(2) The liquid crystal display according to claim 1, wherein the conductive portion is provided at the outermost periphery of a pixel constituting an effective display surface of an image.
により形成されていることを特徴とする特許請求の範囲
第１項記載の液晶表示体。(3) The liquid crystal display according to claim 1, wherein the conductive portion is formed of at least one MIM forming metal.
れていることを特徴とする特許請求の範囲第１項記載の
液晶表示体。(4) The liquid crystal display according to claim 1, wherein the conductive portion is made of the same metal as the pixel forming metal.
る特許請求の範囲第１項記載の液晶表示体。(5) The liquid crystal display according to claim 1, further comprising a dielectric layer on the conductive portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60199131A JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60199131A JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3219793A Division JP2638418B2 (en) | 1993-02-22 | 1993-02-22 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6258226A true JPS6258226A (en) | 1987-03-13 |
| JPH0422499B2 JPH0422499B2 (en) | 1992-04-17 |
Family
ID=16402654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60199131A Granted JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6258226A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274930A (en) * | 1987-05-06 | 1988-11-11 | Seiko Epson Corp | Active matrix liquid crystal panel |
| JPH027024A (en) * | 1988-06-27 | 1990-01-11 | Fujitsu Ltd | Thin film transistor matrix |
| EP0369828A2 (en) * | 1988-11-18 | 1990-05-23 | Nec Corporation | Active matrix liquid crystal display panel with an electrostatic protection circuit |
| EP0369450A2 (en) * | 1988-11-18 | 1990-05-23 | Seiko Instruments Inc. | Input protection circuit of electro-optical device |
| JPH0299695U (en) * | 1988-09-02 | 1990-08-08 | ||
| JPH02266834A (en) * | 1988-12-05 | 1990-10-31 | Hughes Aircraft Co | Cell by pass circuit |
| US5227901A (en) * | 1991-03-20 | 1993-07-13 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
| EP0605176A1 (en) * | 1992-12-21 | 1994-07-06 | SHARP Corporation | An active matrix type liquid crystal display panel and a method for producing the same |
| US5719647A (en) * | 1994-11-08 | 1998-02-17 | Sharp Kabushiki Kaisha | Reflective type liquid crystal display apparatus having ESD protecting MIM beneath each reflective electrode |
| US6333771B1 (en) | 1997-12-26 | 2001-12-25 | Sharp Kabushiki Kaisha | Liquid crystal display device capable of reducing the influence of parasitic capacities |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58163987A (en) * | 1982-03-25 | 1983-09-28 | 富士通株式会社 | Liquid crystal panel |
| JPS61183620A (en) * | 1985-02-09 | 1986-08-16 | Sharp Corp | Production of liquid crystal display element |
-
1985
- 1985-09-09 JP JP60199131A patent/JPS6258226A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58163987A (en) * | 1982-03-25 | 1983-09-28 | 富士通株式会社 | Liquid crystal panel |
| JPS61183620A (en) * | 1985-02-09 | 1986-08-16 | Sharp Corp | Production of liquid crystal display element |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274930A (en) * | 1987-05-06 | 1988-11-11 | Seiko Epson Corp | Active matrix liquid crystal panel |
| JPH027024A (en) * | 1988-06-27 | 1990-01-11 | Fujitsu Ltd | Thin film transistor matrix |
| JPH0299695U (en) * | 1988-09-02 | 1990-08-08 | ||
| US5212573A (en) * | 1988-11-18 | 1993-05-18 | Seiko Instruments Inc. | Input protection circuit of electro-optical device |
| EP0369450A2 (en) * | 1988-11-18 | 1990-05-23 | Seiko Instruments Inc. | Input protection circuit of electro-optical device |
| EP0369828A2 (en) * | 1988-11-18 | 1990-05-23 | Nec Corporation | Active matrix liquid crystal display panel with an electrostatic protection circuit |
| JPH02266834A (en) * | 1988-12-05 | 1990-10-31 | Hughes Aircraft Co | Cell by pass circuit |
| US5227901A (en) * | 1991-03-20 | 1993-07-13 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
| EP0605176A1 (en) * | 1992-12-21 | 1994-07-06 | SHARP Corporation | An active matrix type liquid crystal display panel and a method for producing the same |
| US5471329A (en) * | 1992-12-21 | 1995-11-28 | Sharp Kabushiki Kaisha | Active matrix type liquid crystal display panel and a method for producing the same, having a construction capable of preventing breakdown of the switching elements or deterioration due to static electricity |
| US5719647A (en) * | 1994-11-08 | 1998-02-17 | Sharp Kabushiki Kaisha | Reflective type liquid crystal display apparatus having ESD protecting MIM beneath each reflective electrode |
| US6333771B1 (en) | 1997-12-26 | 2001-12-25 | Sharp Kabushiki Kaisha | Liquid crystal display device capable of reducing the influence of parasitic capacities |
| US6608655B2 (en) | 1997-12-26 | 2003-08-19 | Sharp Kabushiki Kaisha | Liquid crystal display device including identical shape dummy wire surrounding each pixel and capable of reducing the influence of parasitic capacities |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0422499B2 (en) | 1992-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |