JP2812718B2 - Manufacturing method of nonlinear element - Google Patents
Manufacturing method of nonlinear elementInfo
- Publication number
- JP2812718B2 JP2812718B2 JP18122289A JP18122289A JP2812718B2 JP 2812718 B2 JP2812718 B2 JP 2812718B2 JP 18122289 A JP18122289 A JP 18122289A JP 18122289 A JP18122289 A JP 18122289A JP 2812718 B2 JP2812718 B2 JP 2812718B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- metal
- liquid crystal
- lower metal
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、アクティブマトリックス方式液晶表示パネ
ルにおいて液晶スイッチング素子に用いられる金属−絶
縁体−金属構造を有する非線形素子（以下、MIMと記
す）の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a non-linear element (hereinafter, referred to as MIM) having a metal-insulator-metal structure used for a liquid crystal switching element in an active matrix type liquid crystal display panel. It relates to a manufacturing method.
液晶表示パネルは実用化が進み、現在では高品質高密
度化が望まれている。これは、MIM素子を用いたアクテ
ィブマトリックス方式において可能である。Liquid crystal display panels have been put into practical use, and high quality and high density are now desired. This is possible in an active matrix system using MIM elements.
MIM素子においては、導電体は金属としてみなすこと
ができ、例えばタンタル（Ta）−酸化タンタル（TaO）
−酸化インジウムスズ（ITO）のような金属−絶縁体−
導電体（金属）構造のMIM素子を液晶表示パネルに使用
する場合、次のような工程により製造することができ
る。第３図（ａ）は液晶表示パネルを示す平面図、第３
図（ｂ）は第３図（ａ）におけるＣ−Ｄ断面の拡大した
断面図である。以下、第３図（ａ）、（ｂ）を交互に参
照して説明する。ガラス基板１上にTaをスパッタリング
法により形成し、フォトエッチングによりMIM素子の下
層金属２と配線５とを形成する。次に陽極酸化法により
Ta表面に絶縁体３としてTaOを形成する。In the MIM element, the conductor can be regarded as a metal, for example, tantalum (Ta) -tantalum oxide (TaO)
-Metal such as indium tin oxide (ITO) -Insulator-
When a MIM element having a conductor (metal) structure is used for a liquid crystal display panel, it can be manufactured by the following steps. FIG. 3A is a plan view showing a liquid crystal display panel, and FIG.
FIG. 3B is an enlarged cross-sectional view taken along line CD of FIG. 3A. Hereinafter, description will be given with reference to FIGS. 3 (a) and 3 (b) alternately. Ta is formed on a glass substrate 1 by a sputtering method, and the lower metal 2 and the wiring 5 of the MIM element are formed by photoetching. Next, by anodizing method
TaO is formed as an insulator 3 on the Ta surface.
次に、下層金属２の段差部がガラス基板１の移動方向
に対して垂直になるようにガラス基板１を配置し、ガラ
ス基板１を下層金属２の段差に対して垂直に矢印８に示
す方向に移動させながらスパッタリング法によりITOを
形成し、フォトエッチングによりパターニングしMIM素
子の上層金属４と液晶駆動用画素電極６とを形成する。Next, the glass substrate 1 is arranged so that the step portion of the lower metal 2 is perpendicular to the moving direction of the glass substrate 1, and the glass substrate 1 is moved perpendicularly to the step of the lower metal 2 in a direction indicated by an arrow 8. Then, ITO is formed by a sputtering method while being moved, and patterned by photoetching to form an upper layer metal 4 of the MIM element and a pixel electrode 6 for driving a liquid crystal.
上層金属４の段差被覆性は、ガラス基板１の移動方向
により異なる。すなわち、ガラス基板の１の移動方向に
対して前側の段差は、上層金属４の段差被覆性は良い。
しかし、移動方向に対して後側の段差は、上層金属４の
段差被覆性は段差が陰となるため非常に悪い。これによ
り、非線形素子の片側に断線が発生がしやすい。The step coverage of the upper layer metal 4 differs depending on the moving direction of the glass substrate 1. That is, the step on the front side with respect to the moving direction of the glass substrate 1 has good step coverage with the upper metal 4.
However, the step on the rear side in the moving direction is very poor in the step coverage of the upper metal 4 because the step is shadowed. As a result, disconnection is likely to occur on one side of the nonlinear element.
また、断線が発生しなくても、上層金属４が下層金属
２の段差部で膜厚が他に比べ薄くなる。このため、第４
図に示すようにこの段差部分にエッチング液が入り込
み、段差部分で上層金属４のサイドエッチングが進行
し、絶縁体３を介して下層金属２と上層金属４とが重な
った領域、すなわち素子面積のバラツキが生じる。In addition, even if the disconnection does not occur, the thickness of the upper metal layer 4 at the step portion of the lower metal layer 2 is smaller than that of the other layers. Therefore, the fourth
As shown in the figure, the etching solution enters the step, the side etching of the upper metal 4 progresses in the step, and the region where the lower metal 2 and the upper metal 4 overlap with each other via the insulator 3, ie, the area of the element area. Variations occur.
本発明の目的は、このような課題を解決し、断線及び
素子面積バラツキの少ない、高品質高密度の液晶表示パ
ネルの製造方法を提供することである。An object of the present invention is to solve such problems and to provide a method of manufacturing a high-quality and high-density liquid crystal display panel with less disconnection and element area variation.
上記の目的は、上層金属をインライン式スパッタリン
グ装置により形成する際、非線形素子の下層金属の段差
部がガラス基板の移動方向に対して平行になるようにガ
ラス基板を配置し、ガラス基板を下層金属の段差部に対
して平行方向に移動させながらスパッタリング法により
前記上層金属を形成することによって解決される。The above object is to form the upper metal layer by an in-line sputtering apparatus, arrange the glass substrate so that the step portion of the lower metal layer of the nonlinear element is parallel to the moving direction of the glass substrate, and place the glass substrate on the lower metal layer. The problem is solved by forming the upper layer metal by sputtering while moving the upper layer metal in a direction parallel to the stepped portion.
本発明の実施例について、図面を参照しながら詳細に
説明する。Embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本実施例により製作したMIM素子を用いた液
晶表示パネルを示し、第１図（ａ）は平面図、第１図
（ｂ）は斜視図、第１図（ｃ）は（ａ）のＡ−Ｂ断面の
拡大した断面図、第２図は実施例で使用したインライン
スパッタリング装置の概略図である。以下、第１図、及
び第２図を交互に参照して説明する。FIG. 1 shows a liquid crystal display panel using a MIM element manufactured according to the present embodiment. FIG. 1 (a) is a plan view, FIG. 1 (b) is a perspective view, and FIG. 1 (c) is (a). 2) is an enlarged cross-sectional view taken along the line AB, and FIG. 2 is a schematic view of an in-line sputtering apparatus used in the embodiment. Hereinafter, description will be made with reference to FIGS. 1 and 2 alternately.
ガラス基板１上にTaをスパッタリング法により、厚さ
200nm〜1000nm形成し、フォトエッチングによりパター
ニングを行い、Taからなる下層金属２及び配線５を形成
する。Sputtering Ta on glass substrate 1 with thickness
It is formed to a thickness of 200 nm to 1000 nm, and patterned by photoetching to form the lower metal 2 made of Ta and the wiring 5.
次に、クエン酸0.1％水溶液中、30V電圧で、Taを陽極
酸化し、下層金属２表面に絶縁体３としてTaOを、厚さ5
0nm形成する。Next, in a 0.1% aqueous citric acid solution, Ta is anodized at a voltage of 30 V, and TaO as an insulator 3 is deposited on the surface of the lower metal 2 to a thickness of 5%.
0 nm is formed.
次に、下層金属２の段差部分がガラス基板の移動方向
に対して平行にガラス基板を配置し、ガラス基板１を矢
印８の方向に移動させながら下記に記載するスパッタリ
ング条件より上層金属４及び液晶駆動用画素電極６とし
てITOを、厚さ50nm〜200nm形成する。これにより、ガラ
ス基板１の移動方向により異なっていた段差被覆性を均
一にすることができる。Next, the glass substrate is arranged so that the step portion of the lower metal 2 is parallel to the moving direction of the glass substrate, and while the glass substrate 1 is moved in the direction of arrow 8, the upper metal 4 and the liquid crystal are formed under the sputtering conditions described below. ITO is formed as the driving pixel electrode 6 with a thickness of 50 nm to 200 nm. Thereby, the step coverage that differs depending on the moving direction of the glass substrate 1 can be made uniform.
ターゲット……ITO（SuO25wt％〜10wt％含有） ガス種…………ArまたはO2またはそれらの混合ガス ガス圧…………1mm torr〜10mm torr R. F電圧………0.5W/cm2〜5W/cm2 基板移動速度…0.1cm/min〜10cm/min 基板温度………100℃〜500℃ インラインスパッタリング装置は、第２図に示すように
ガラス基板１がターゲット７上に移動しながら、連続的
に膜を形成する。Target: ITO (containing 5 wt% to 10 wt% of SuO 2 ) Gas type: Ar or O 2 or a mixed gas of them Gas pressure: 1 mm torr to 10 mm torr R. F voltage: 0.5 W / cm 2 -5W / cm 2 Substrate moving speed 0.1cm / min-10cm / min Substrate temperature 100 ℃ -500 ℃ In the in-line sputtering apparatus, the glass substrate 1 moves on the target 7 as shown in FIG. While forming a film, the film is continuously formed.
最後に、フォトエッチングによりパターニングを行
い、ITOからなるMIM素子の上層金属４及び液晶駆動用画
素電極６を形成する。Finally, patterning is performed by photoetching to form the upper metal layer 4 of the MIM element made of ITO and the pixel electrode 6 for driving the liquid crystal.
なお、第１図（ａ）に示した矢印８と180゜回転した
逆方向にガラス基板１を移動しても、同様の効果が得ら
れる。Note that the same effect can be obtained by moving the glass substrate 1 in the opposite direction rotated by 180 ° with respect to the arrow 8 shown in FIG.
本実施例では、絶縁体３の形成方法として陽極酸化法
を用いた例で説明したが、スパッタリング法またプラズ
マ化学気相成長法などを用いても、酸化シリコン膜や窒
化シリコン膜等からなる絶縁体３を形成しても良い。In this embodiment, an example in which an anodic oxidation method is used as a method for forming the insulator 3 has been described. However, even if a sputtering method, a plasma chemical vapor deposition method, or the like is used, an insulating film formed of a silicon oxide film, a silicon nitride film, or the like can be used. The body 3 may be formed.
また本実施例では、下層金属２としてTa上層金属４と
してITO、絶縁体３としてTaOを用いたが、上層及び下層
金属として、アルミニウム、クロム、タングステン、ニ
ッケルなどの他の金属、絶縁体として窒化シリコンや酸
化シリコン等を用いてもMIM素子を製造することができ
る。In this embodiment, the lower metal 2 is made of ITO as the upper metal 4 and the insulator 3 is made of TaO. A MIM element can be manufactured using silicon, silicon oxide, or the like.
以上の説明で明らかなように、本発明によれば、上層
金属の段差被覆性が向上し断線やエッチング液のしみ込
みによる素子面積バラツキを抑えることが可能となり、
高品質高密度の液晶表示パネルを得ることができる。As is clear from the above description, according to the present invention, the step coverage of the upper metal layer is improved, and it is possible to suppress variations in the element area due to disconnection and penetration of the etching solution,
A high quality and high density liquid crystal display panel can be obtained.
第１図は本発明におけるMIM素子を用いた液晶表示パネ
ルを示し、第１図（ａ）は平面図、第１図（ｂ）は斜視
図、第１図（ｃ）は第１図（ａ）におけるＡ−Ｂ断面の
断面図、第２図は本発明の実施例で使用したインライン
スパッタリング装置を示す概略断面図、第３図（ａ）、
（ｂ）は従来例におけるMIM素子を用いた液晶表示パネ
ルを示し、第３図（ａ）は平面図、第３図（ｂ）は断面
図、第４図は従来例におけるMIM素子の問題点を説明す
るための斜視図である。 １……ガラス基板、 ２……下層金属、 ３……絶縁体、 ４……上層金属、 ５……配線、 ６……液晶駆動用画素電極。FIG. 1 shows a liquid crystal display panel using a MIM element according to the present invention. FIG. 1 (a) is a plan view, FIG. 1 (b) is a perspective view, and FIG. 1 (c) is FIG. 2) is a cross-sectional view taken along a line AB, FIG. 2 is a schematic cross-sectional view showing an in-line sputtering apparatus used in an embodiment of the present invention, FIG.
3B shows a liquid crystal display panel using a conventional MIM element, FIG. 3A is a plan view, FIG. 3B is a sectional view, and FIG. 4 is a problem of the conventional MIM element. It is a perspective view for explaining. DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Lower metal, 3 ... Insulator, 4 ... Upper metal, 5 ... Wiring, 6 ... Liquid crystal drive pixel electrode.
Claims (1)
属構造を有する非線形素子の、前記上層金属をインライ
ン式スパッタリング装置により形成する非線形素子の製
造方法において、前記上層金属は前記非線形素子の前記
下層金属の段差部が前記ガラス基板の移動方向に対して
平行になるように前記ガラス基板を配置し、前記ガラス
基板を前記下層金属の段差部に対して平行方向に移動さ
せながらスパッタリング法により前記上層金属を形成す
ることを特徴とする非線形素子の製造方法。1. A method of manufacturing a nonlinear element having a lower metal-insulator-upper metal structure on a glass substrate, wherein the upper metal is formed by an in-line sputtering apparatus. The glass substrate is arranged such that the step portion of the lower metal is parallel to the moving direction of the glass substrate, and the sputtering method is performed while moving the glass substrate in a direction parallel to the step portion of the lower metal. A method for manufacturing a nonlinear element, comprising forming the upper layer metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122289A JP2812718B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of nonlinear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122289A JP2812718B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of nonlinear element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0345931A JPH0345931A (en) | 1991-02-27 |
| JP2812718B2 true JP2812718B2 (en) | 1998-10-22 |
Family
ID=16096952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18122289A Expired - Lifetime JP2812718B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of nonlinear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2812718B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654207A (en) * | 1903-02-03 | 1997-08-05 | Sharp Kabushiki Kaisha | Method of making two-terminal nonlinear device and liquid crystal apparatus including the same |
-
1989
- 1989-07-13 JP JP18122289A patent/JP2812718B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345931A (en) | 1991-02-27 |
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