JPH0422499B2 - - Google Patents
Info
- Publication number
- JPH0422499B2 JPH0422499B2 JP60199131A JP19913185A JPH0422499B2 JP H0422499 B2 JPH0422499 B2 JP H0422499B2 JP 60199131 A JP60199131 A JP 60199131A JP 19913185 A JP19913185 A JP 19913185A JP H0422499 B2 JPH0422499 B2 JP H0422499B2
- Authority
- JP
- Japan
- Prior art keywords
- rubbing
- liquid crystal
- pixel
- mim
- conductive portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、MIMをスイツチングに利用した液
晶表示体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal display using MIM for switching.
本発明は、MIMを形成された絶縁基板上の画
素のラビング材進入方向側に、導電部分若しく
は、該導電部分上に誘電体層を形成することによ
り、ラビング材が該絶縁基板上を擦る際に発生す
るラビング材表面の電荷が該導電部分若しくは該
導電部分上に形成された誘電体層に放出され、画
素に接続されたMIM素子の絶縁膜が保護される。
一方、画素面をラビングする際には、画素は導電
体故、摩擦による電荷の蓄積は起こらない。かく
してラビング作業時に発生するMIM素子の静電
気破壊を防止し、液晶表示体点灯の際の係る原因
による異常表示すなわち点灯欠陥の発生を防止で
きる。
In the present invention, by forming a conductive portion or a dielectric layer on the conductive portion on the side in which the rubbing material enters the pixel on the insulating substrate on which the MIM is formed, when the rubbing material rubs the top of the insulating substrate, Charges generated on the surface of the rubbing material are released to the conductive portion or a dielectric layer formed on the conductive portion, thereby protecting the insulating film of the MIM element connected to the pixel.
On the other hand, when rubbing the pixel surface, since the pixel is a conductor, no charge is accumulated due to friction. In this way, it is possible to prevent electrostatic damage to the MIM element that occurs during the rubbing operation, and to prevent abnormal display, that is, lighting defects, due to such causes when lighting the liquid crystal display.
従来のMIM素子を用いた液晶表示体は、特開
昭59−83190記載の第８図、特開昭59−78386記載
の第１図、及び特開昭59−53887記載の第１図に
示す様な、画素パターンが知られていた。
A liquid crystal display using a conventional MIM element is shown in FIG. 8 of JP-A-59-83190, FIG. 1 of JP-A-59-78386, and FIG. 1 of JP-A-59-53887. Various pixel patterns were known.
しかし従来技術では、液晶の配向処理にラビン
グを用いた場合にラビング材が摩擦により帯電
し、MIM等の電気的耐圧の低い素子はラビング
材の電荷が放出された際、素子を形成する絶縁膜
の一部がジユール熱により破損し、スイツチング
特性が失なわれ、点灯欠陥が発生するという問題
点を有する。一方素子の電気的耐圧を高めるに
は、絶縁膜の材質、膜厚、パターン幅等を変更す
れば良いが、素子特性も変化し液晶の駆動電圧等
の制約もあつて難しい。液晶の配向処理として
は、液晶のテイルト角ψを極力小さく保ち点灯の
際コントラストを高めることと、製造効率を考慮
するとラビングによる処理が最も適当である。
However, in conventional technology, when rubbing is used to align liquid crystals, the rubbing material becomes electrically charged due to friction, and when the electrical charge of the rubbing material is released, the insulating film forming the device is The problem is that a part of the lamp is damaged by the Joule heat, the switching characteristics are lost, and lighting defects occur. On the other hand, in order to increase the electrical breakdown voltage of the device, it is possible to change the material, thickness, pattern width, etc. of the insulating film, but this is difficult because the device characteristics also change and there are restrictions such as the driving voltage of the liquid crystal. The most appropriate alignment treatment for the liquid crystal is rubbing, considering the need to keep the tail angle ψ of the liquid crystal as small as possible to increase the contrast during lighting and manufacturing efficiency.
そこで本発明は係る問題点を解決するもので、
その目的とするところはMIM等を内蔵した液晶
表示体の効率生産にある。 Therefore, the present invention solves these problems,
The aim is to efficiently produce liquid crystal displays with built-in MIM, etc.
本発明の液晶表示体は、液晶層を支持する２枚
の絶縁基板の少なくとも一方の絶縁基板の液晶層
と接する基板面上に、MIM素子を形成し、該素
子を用いて液晶層の印加電圧を制御する機構を有
する液晶表示体に於いて、ラビング作業時にラビ
ング材が最初に接する、MIM素子が形成された
画素のラビング材の進入方向側に導電部分を有す
ること若しくは該導電部分を画像の有効表示面を
構成する画素最外周に有すること、及び該導電部
分がMIM形成金属の少なくとも１つにより形成
されていること若しくは該導電部分が画素形成金
属と同一金属で形成されていること並びに該導電
部分上に誘電体層を有することを特徴とする。
In the liquid crystal display of the present invention, an MIM element is formed on the surface of at least one of the two insulating substrates that is in contact with the liquid crystal layer of two insulating substrates that support the liquid crystal layer, and the MIM element is used to apply voltage to the liquid crystal layer. In a liquid crystal display having a mechanism for controlling the image, a conductive part is provided on the side in which the rubbing material enters the pixel on which the MIM element is formed, which is the first contact with the rubbing material during the rubbing operation, or the conductive part is used as a part of the image. It is located at the outermost periphery of a pixel constituting an effective display surface, and the conductive portion is formed of at least one of the MIM forming metals, or the conductive portion is formed of the same metal as the pixel forming metal; It is characterized by having a dielectric layer on the conductive portion.
以下、本発明について実施例に基づいて詳細に
説明する。第１図は本発明に基づくMIM液晶表
示体のMIM素子が形成された絶縁基板のパター
ン図であるが、１が該導電部分を示し、ラビング
材の進入方向側に形成している。ラビング方向が
図中で上下方向若しくは左右方向の場合は、ラビ
ング材進入方向の画像の有効表示面の一辺のみに
該導電部分を形成し、静電気によるMIM素子の
破壊を防止できた。
Hereinafter, the present invention will be described in detail based on examples. FIG. 1 is a pattern diagram of an insulating substrate on which MIM elements of a MIM liquid crystal display according to the present invention are formed, and 1 indicates the conductive portion, which is formed on the side in which the rubbing material enters. When the rubbing direction was vertical or horizontal in the figure, the conductive portion was formed only on one side of the effective display surface of the image in the rubbing material advancing direction, making it possible to prevent destruction of the MIM element due to static electricity.
第２図はラビング方向が図中で斜め方向からの
場合を表し、該導電部分をラビング方向の角を挟
む二辺に形成することにより同様の効果を得た。 FIG. 2 shows a case where the rubbing direction is diagonal in the figure, and a similar effect was obtained by forming the conductive portions on two sides sandwiching the corner of the rubbing direction.
第３図は画像の有効表示面を構成する画素最外
周に該導電部分を形成したもので、この場合は、
あらゆる角度からのラビングに対し、同様の効果
を得た。 FIG. 3 shows a case where the conductive portion is formed on the outermost periphery of the pixel that constitutes the effective display surface of the image.
Similar effects were obtained by rubbing from all angles.
ところで該導電部分の材質であるが、本実施例
ではMIM素子を形成する金属としてタンタル、
及びこれを陽極酸化して得る五酸化タンタル、こ
の五酸化タンタル上にクロムを蒸着若しくはスパ
ツタし、タンタル、クロムの各々を用いて該導電
部分を形成した。一方画素材質であるITOを用い
て該導電部分を形成した。両者共に材質に関係な
く、同様の効果が確認できた。 By the way, regarding the material of the conductive part, in this example, the metal forming the MIM element is tantalum,
and tantalum pentoxide obtained by anodizing this, and chromium was vapor-deposited or sputtered on the tantalum pentoxide to form the conductive portion using tantalum and chromium, respectively. On the other hand, the conductive portion was formed using ITO, which is a picture material. Similar effects were confirmed in both cases, regardless of the material.
さてタンタルを該導電部分に用いた際、前述の
場合は端子との電気的接続はされていないが、端
子と電気的接続をした場合について次に述べる。
このような場合、該導電部分も陽極酸化工程で素
子部同様に酸化され五酸化タンタルという誘電体
層が2000Å以下の膜厚で形成される、すなわち該
導電部分上に誘電体層が存在する場合だが、係る
場合に於いても全く同様の効果が確認できた。ラ
ビング作業前に基板表面にPI膜を形成するがこ
のPI膜も誘電体層と考えることができ、係る場
合に於いても全く問題なく同様の効果を得た。 Now, when tantalum is used for the conductive portion, it is not electrically connected to the terminal in the above case, but the case where it is electrically connected to the terminal will be described below.
In such a case, the conductive part is also oxidized in the anodizing process in the same way as the element part, and a dielectric layer of tantalum pentoxide is formed with a thickness of 2000 Å or less, that is, if the dielectric layer is present on the conductive part. However, even in such cases, exactly the same effect was confirmed. A PI film is formed on the surface of the substrate before the rubbing operation, and this PI film can also be considered a dielectric layer, and the same effect was obtained without any problems in this case.
これら一連の実施例は、MIM素子が形成され
た絶縁基板の完成後、アミノシラン処理、PI膜
形成した後、ラビングにより配向させた。セル完
成後点灯させ欠陥を観察したのであるが、ラビン
グ時のMIM素子の静電気による破壊に起因する
点灯欠陥は、ラビング材進入方向に最も近い画素
に接続されたMIMに集中的に発生し、外観上、
長さのまちまちな線状の特徴的表示状態を呈する
ので、本実施例に基づく効果の確認は容易であ
る。 In these series of Examples, after completion of the insulating substrate on which the MIM element was formed, the substrate was treated with aminosilane, a PI film was formed, and then the substrate was oriented by rubbing. After the cell was completed, we turned it on and observed the defects, and found that the lighting defects caused by static electricity destruction of the MIM element during rubbing occurred concentratedly in the MIM connected to the pixel closest to the direction in which the rubbing material entered, and the appearance Up,
Since the display exhibits a characteristic linear display state of varying length, it is easy to confirm the effect based on this embodiment.
上述の如く本発明は、一対の基板内に液晶が封
入され、該基板の一方の基板上に複数の画素電極
がマトリクス状に配列され、該画素電極に映像信
号を供給するスイツチング素子が形成されてなる
液晶表示体において、ラビング作業の際にラビン
グ材が基板上へ接する方向に導電部材が該基板上
に載置されてなるようにしたから、ラビングによ
つて生ずる静電気によりスイツチング素子が破壊
されることがないので、画素欠陥を大幅に減小で
き歩留を大きく向上することができる。
As described above, in the present invention, a liquid crystal is sealed within a pair of substrates, a plurality of pixel electrodes are arranged in a matrix on one of the substrates, and a switching element is formed to supply a video signal to the pixel electrode. In a liquid crystal display made of a liquid crystal display, the conductive member is placed on the substrate in the direction in which the rubbing material contacts the substrate during the rubbing operation, so that the switching elements are not destroyed by static electricity generated by rubbing. Therefore, pixel defects can be significantly reduced and yields can be greatly improved.
第１図は本発明に基づく、ラビング方向が左か
らの場合のパターン図を示す。第２図は本発明に
基づく、ラビング方向が左上からの斜めの場合の
パターン図を示す。第３図は本発明に基づく、画
素最外周にパターンを形成した場合のパターン図
を示す。
１……導電部分若しくは該導電部分上に形成さ
れた誘電体層、２……端子、３……画素、４……
MIM素子。
FIG. 1 shows a pattern diagram when the rubbing direction is from the left according to the present invention. FIG. 2 shows a pattern diagram when the rubbing direction is diagonal from the upper left corner according to the present invention. FIG. 3 shows a pattern diagram when a pattern is formed on the outermost periphery of a pixel based on the present invention. DESCRIPTION OF SYMBOLS 1... Conductive part or a dielectric layer formed on the conductive part, 2... Terminal, 3... Pixel, 4...
MIM element.
Claims (1)
方の基板上に複数の画素電極がマトリクス状に配
列され、該画素電極に映像信号を供給するスイツ
チング素子が形成されてなる液晶表示体におい
て、該画素電極および該スイツチング素子で構成
されてなる画像表示部の外周部の、ラビング作業
の際の、ラビング材の進入方向側の辺に、導電部
材が載置されてなることを特徴とする液晶表示
体。1. In a liquid crystal display in which a liquid crystal is sealed within a pair of substrates, a plurality of pixel electrodes are arranged in a matrix on one of the substrates, and a switching element is formed to supply a video signal to the pixel electrode. , characterized in that a conductive member is placed on the outer periphery of the image display section constituted by the pixel electrode and the switching element, on the side in the direction in which the rubbing material enters during the rubbing operation. liquid crystal display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60199131A JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60199131A JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3219793A Division JP2638418B2 (en) | 1993-02-22 | 1993-02-22 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6258226A JPS6258226A (en) | 1987-03-13 |
| JPH0422499B2 true JPH0422499B2 (en) | 1992-04-17 |
Family
ID=16402654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60199131A Granted JPS6258226A (en) | 1985-09-09 | 1985-09-09 | Liquid crystal display body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6258226A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2615615B2 (en) * | 1987-05-06 | 1997-06-04 | セイコーエプソン株式会社 | Active matrix liquid crystal panel |
| JPH027024A (en) * | 1988-06-27 | 1990-01-11 | Fujitsu Ltd | thin film transistor matrix |
| JPH0299695U (en) * | 1988-09-02 | 1990-08-08 | ||
| JPH02137366A (en) * | 1988-11-18 | 1990-05-25 | Nec Corp | Diode-type active matrix substrate |
| JPH02137828A (en) * | 1988-11-18 | 1990-05-28 | Seiko Instr Inc | Input protection device for electrooptical device |
| US4935315A (en) * | 1988-12-05 | 1990-06-19 | Hughes Aircraft Company | Cell bypass circuit |
| EP0504792B1 (en) * | 1991-03-20 | 1995-06-14 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
| JPH06186590A (en) * | 1992-12-21 | 1994-07-08 | Sharp Corp | Active matrix type liquid crystal display panel |
| JP3085633B2 (en) * | 1994-11-08 | 2000-09-11 | シャープ株式会社 | Reflective liquid crystal display |
| JP3335895B2 (en) | 1997-12-26 | 2002-10-21 | シャープ株式会社 | Liquid crystal display |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58163987A (en) * | 1982-03-25 | 1983-09-28 | 富士通株式会社 | Liquid crystal panel |
| JPS61183620A (en) * | 1985-02-09 | 1986-08-16 | Sharp Corp | Production of liquid crystal display element |
-
1985
- 1985-09-09 JP JP60199131A patent/JPS6258226A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58163987A (en) * | 1982-03-25 | 1983-09-28 | 富士通株式会社 | Liquid crystal panel |
| JPS61183620A (en) * | 1985-02-09 | 1986-08-16 | Sharp Corp | Production of liquid crystal display element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258226A (en) | 1987-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100375748B1 (en) | Liquid crystal display device | |
| US5844641A (en) | Liquid crystal display device having storage capacitors and additional opaque electrodes | |
| JPH0588203A (en) | Method of assembling metal-insulator-metal type device array and display, into which such array is incorporated | |
| US8089680B2 (en) | Electrophoretic display device | |
| JPH0422499B2 (en) | ||
| US6326641B1 (en) | Liquid crystal display device having a high aperture ratio | |
| KR100286049B1 (en) | Liquid crystal displays having electrostatic protection circuits | |
| JPH02831A (en) | Active matrix substrate manufacturing method | |
| KR100254937B1 (en) | Color electro-optics device | |
| US20030081164A1 (en) | Liquid crystal screen display | |
| JP2638418B2 (en) | Manufacturing method of liquid crystal display device | |
| JPS6210626A (en) | Lilquid crystal cell | |
| KR19990080392A (en) | Liquid crystal display element | |
| JPH03209435A (en) | Active matrix type electrooptical device | |
| JPH1010551A (en) | Liquid crystal display element | |
| JP2009069725A (en) | Liquid crystal panel | |
| JPS62138834A (en) | Active matrix type liquid crystal display device | |
| JPH05142578A (en) | Liquid crystal display device | |
| KR100294197B1 (en) | Liquid Crystal Display Device with Smooth Film and Formation Method | |
| KR100648212B1 (en) | Fringe Field Drive Liquid Crystal Display | |
| JPS6190129A (en) | Multiplex display type liquid crystal cell | |
| JP2687967B2 (en) | Liquid crystal display | |
| JP2503752Y2 (en) | Liquid crystal display | |
| JPH02146502A (en) | Color filter for liquid crystal display | |
| JPS62160424A (en) | Ferroelectric liquid crystal element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |