JPS6258138B2 - - Google Patents
Info
- Publication number
- JPS6258138B2 JPS6258138B2 JP14418379A JP14418379A JPS6258138B2 JP S6258138 B2 JPS6258138 B2 JP S6258138B2 JP 14418379 A JP14418379 A JP 14418379A JP 14418379 A JP14418379 A JP 14418379A JP S6258138 B2 JPS6258138 B2 JP S6258138B2
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- heat treatment
- defects
- substrate
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 18
- 238000011282 treatment Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229940003304 dilt Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14418379A JPS5667922A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14418379A JPS5667922A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27874488A Division JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5667922A JPS5667922A (en) | 1981-06-08 |
| JPS6258138B2 true JPS6258138B2 (enrdf_load_stackoverflow) | 1987-12-04 |
Family
ID=15356120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14418379A Granted JPS5667922A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5667922A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5994809A (ja) * | 1982-11-22 | 1984-05-31 | Fujitsu Ltd | 半導体素子の製造方法 |
| JPH01265525A (ja) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | 半導体基板の製造方法 |
-
1979
- 1979-11-07 JP JP14418379A patent/JPS5667922A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5667922A (en) | 1981-06-08 |
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