JPH0447456B2 - - Google Patents
Info
- Publication number
- JPH0447456B2 JPH0447456B2 JP27874488A JP27874488A JPH0447456B2 JP H0447456 B2 JPH0447456 B2 JP H0447456B2 JP 27874488 A JP27874488 A JP 27874488A JP 27874488 A JP27874488 A JP 27874488A JP H0447456 B2 JPH0447456 B2 JP H0447456B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxygen
- heat treatment
- defects
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 238000010574 gas phase reaction Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27874488A JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27874488A JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14418379A Division JPS5667922A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02177321A JPH02177321A (ja) | 1990-07-10 |
JPH0447456B2 true JPH0447456B2 (enrdf_load_stackoverflow) | 1992-08-04 |
Family
ID=17601598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27874488A Granted JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02177321A (enrdf_load_stackoverflow) |
-
1988
- 1988-11-04 JP JP27874488A patent/JPH02177321A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH02177321A (ja) | 1990-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100733111B1 (ko) | 접합 soi 웨이퍼의 제조방법 및 접합 soi 웨이퍼 | |
KR101462397B1 (ko) | 접합 웨이퍼의 제조 방법 | |
Rozgonyi et al. | Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I. Phosphorus Diffusion‐Induced Misfit Dislocations | |
JPS6255697B2 (enrdf_load_stackoverflow) | ||
JP2000091342A (ja) | シリコンウエーハの熱処理方法及びシリコンウエーハ | |
JP3381816B2 (ja) | 半導体基板の製造方法 | |
KR20000057350A (ko) | 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법 | |
KR100396609B1 (ko) | 반도체기판의처리방법 | |
KR20060040733A (ko) | 웨이퍼의 제조방법 | |
US4666532A (en) | Denuding silicon substrates with oxygen and halogen | |
CN1239317A (zh) | 具有缺陷祛除区的半导体 | |
JP2742247B2 (ja) | シリコン単結晶基板の製造方法および品質管理方法 | |
CN117238753B (zh) | 一种氧气辅助氢气微刻蚀氧化镓衬底的预处理方法 | |
US20120049330A1 (en) | Silicon wafer and method for producing the same | |
JPS62123098A (ja) | シリコン単結晶の製造方法 | |
JPS6258138B2 (enrdf_load_stackoverflow) | ||
JPH0447456B2 (enrdf_load_stackoverflow) | ||
JPS6326541B2 (enrdf_load_stackoverflow) | ||
KR100827038B1 (ko) | 헤이즈가 없는 실리콘 에피택셜 웨이퍼의 제조 방법 | |
JPS5854497B2 (ja) | 半導体基板の内部欠陥によるゲッタリング効果を増大させる方法 | |
JP4978544B2 (ja) | エピタキシャルウェーハの製造方法 | |
JPH033244A (ja) | 半導体シリコン基板の熱処理方法 | |
KR0162137B1 (ko) | 웨이퍼 형성방법 | |
JP3238957B2 (ja) | シリコンウェーハ | |
RU2119693C1 (ru) | Способ обработки пластин монокристаллического кремния |