JPH02177321A - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法Info
- Publication number
- JPH02177321A JPH02177321A JP27874488A JP27874488A JPH02177321A JP H02177321 A JPH02177321 A JP H02177321A JP 27874488 A JP27874488 A JP 27874488A JP 27874488 A JP27874488 A JP 27874488A JP H02177321 A JPH02177321 A JP H02177321A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxygen atmosphere
- single crystal
- heat
- temperature range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 title claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000001301 oxygen Substances 0.000 claims abstract description 35
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000012808 vapor phase Substances 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005247 gettering Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 101100208473 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) lcm-2 gene Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27874488A JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27874488A JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14418379A Division JPS5667922A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02177321A true JPH02177321A (ja) | 1990-07-10 |
| JPH0447456B2 JPH0447456B2 (enrdf_load_stackoverflow) | 1992-08-04 |
Family
ID=17601598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27874488A Granted JPH02177321A (ja) | 1988-11-04 | 1988-11-04 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02177321A (enrdf_load_stackoverflow) |
-
1988
- 1988-11-04 JP JP27874488A patent/JPH02177321A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0447456B2 (enrdf_load_stackoverflow) | 1992-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3011178B2 (ja) | 半導体シリコンウェーハ並びにその製造方法と熱処理装置 | |
| JPS6255697B2 (enrdf_load_stackoverflow) | ||
| KR100319413B1 (ko) | 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법 | |
| JP3381816B2 (ja) | 半導体基板の製造方法 | |
| US20120049330A1 (en) | Silicon wafer and method for producing the same | |
| JP2001253795A (ja) | シリコンエピタキシャルウェーハとその製造方法 | |
| JP2742247B2 (ja) | シリコン単結晶基板の製造方法および品質管理方法 | |
| KR20000011682A (ko) | Ｓｉ웨이퍼및그제조방법 | |
| JPH11204534A (ja) | シリコンエピタキシャルウェーハの製造方法 | |
| JP4035886B2 (ja) | シリコンエピタキシャルウェーハとその製造方法 | |
| JPS62123098A (ja) | シリコン単結晶の製造方法 | |
| JPH02177321A (ja) | 半導体基板の製造方法 | |
| JPS6258138B2 (enrdf_load_stackoverflow) | ||
| JPS6326541B2 (enrdf_load_stackoverflow) | ||
| JPS5854497B2 (ja) | 半導体基板の内部欠陥によるゲッタリング効果を増大させる方法 | |
| JPS63198334A (ja) | 半導体シリコンウエ−ハの製造方法 | |
| KR100827038B1 (ko) | 헤이즈가 없는 실리콘 에피택셜 웨이퍼의 제조 방법 | |
| KR0162137B1 (ko) | 웨이퍼 형성방법 | |
| JPH11297704A (ja) | 酸素析出物密度の評価方法 | |
| JP3238957B2 (ja) | シリコンウェーハ | |
| JP3220961B2 (ja) | エピタキシャル半導体ウエーハの製造方法 | |
| JPS59119842A (ja) | 半導体装置の製造方法 | |
| JPH1192300A (ja) | 半導体基板の製造方法 | |
| JPS60176241A (ja) | 半導体基板の製造方法 | |
| JP2003100759A (ja) | エピタキシャルシリコンウェーハの製造方法 |