JPS6257260B2 - - Google Patents
Info
- Publication number
- JPS6257260B2 JPS6257260B2 JP56141893A JP14189381A JPS6257260B2 JP S6257260 B2 JPS6257260 B2 JP S6257260B2 JP 56141893 A JP56141893 A JP 56141893A JP 14189381 A JP14189381 A JP 14189381A JP S6257260 B2 JPS6257260 B2 JP S6257260B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- type
- power supply
- iccs
- type well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56141893A JPS5843558A (ja) | 1981-09-09 | 1981-09-09 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56141893A JPS5843558A (ja) | 1981-09-09 | 1981-09-09 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843558A JPS5843558A (ja) | 1983-03-14 |
| JPS6257260B2 true JPS6257260B2 (enrdf_load_stackoverflow) | 1987-11-30 |
Family
ID=15302611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56141893A Granted JPS5843558A (ja) | 1981-09-09 | 1981-09-09 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843558A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6225698A (ja) * | 1985-07-26 | 1987-02-03 | 鉄建建設株式会社 | シ−ルド掘進機 |
| JPH0340392U (enrdf_load_stackoverflow) * | 1989-08-28 | 1991-04-18 |
-
1981
- 1981-09-09 JP JP56141893A patent/JPS5843558A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5843558A (ja) | 1983-03-14 |
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