JPS5843558A - 相補型絶縁ゲ−ト電界効果半導体集積回路装置 - Google Patents

相補型絶縁ゲ−ト電界効果半導体集積回路装置

Info

Publication number
JPS5843558A
JPS5843558A JP56141893A JP14189381A JPS5843558A JP S5843558 A JPS5843558 A JP S5843558A JP 56141893 A JP56141893 A JP 56141893A JP 14189381 A JP14189381 A JP 14189381A JP S5843558 A JPS5843558 A JP S5843558A
Authority
JP
Japan
Prior art keywords
integrated circuit
wiring
circuit device
semiconductor integrated
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56141893A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257260B2 (enrdf_load_stackoverflow
Inventor
Koji Eguchi
江口　宏次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56141893A priority Critical patent/JPS5843558A/ja
Publication of JPS5843558A publication Critical patent/JPS5843558A/ja
Publication of JPS6257260B2 publication Critical patent/JPS6257260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56141893A 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置 Granted JPS5843558A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56141893A JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141893A JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5843558A true JPS5843558A (ja) 1983-03-14
JPS6257260B2 JPS6257260B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=15302611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141893A Granted JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5843558A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225698A (ja) * 1985-07-26 1987-02-03 鉄建建設株式会社 シ−ルド掘進機
JPH0340392U (enrdf_load_stackoverflow) * 1989-08-28 1991-04-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225698A (ja) * 1985-07-26 1987-02-03 鉄建建設株式会社 シ−ルド掘進機
JPH0340392U (enrdf_load_stackoverflow) * 1989-08-28 1991-04-18

Also Published As

Publication number Publication date
JPS6257260B2 (enrdf_load_stackoverflow) 1987-11-30

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