JPS6257235A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6257235A
JPS6257235A JP19594485A JP19594485A JPS6257235A JP S6257235 A JPS6257235 A JP S6257235A JP 19594485 A JP19594485 A JP 19594485A JP 19594485 A JP19594485 A JP 19594485A JP S6257235 A JPS6257235 A JP S6257235A
Authority
JP
Japan
Prior art keywords
film
copper thin
titanium
thin film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19594485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252856B2 (enrdf_load_stackoverflow
Inventor
Hirokazu Ezawa
弘和 江澤
Toshiro Usami
俊郎 宇佐美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19594485A priority Critical patent/JPS6257235A/ja
Publication of JPS6257235A publication Critical patent/JPS6257235A/ja
Publication of JPH0252856B2 publication Critical patent/JPH0252856B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP19594485A 1985-09-06 1985-09-06 半導体装置の製造方法 Granted JPS6257235A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19594485A JPS6257235A (ja) 1985-09-06 1985-09-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19594485A JPS6257235A (ja) 1985-09-06 1985-09-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6257235A true JPS6257235A (ja) 1987-03-12
JPH0252856B2 JPH0252856B2 (enrdf_load_stackoverflow) 1990-11-14

Family

ID=16349566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19594485A Granted JPS6257235A (ja) 1985-09-06 1985-09-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6257235A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457664A (en) * 1987-08-27 1989-03-03 Nec Corp Contact connection structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457664A (en) * 1987-08-27 1989-03-03 Nec Corp Contact connection structure

Also Published As

Publication number Publication date
JPH0252856B2 (enrdf_load_stackoverflow) 1990-11-14

Similar Documents

Publication Publication Date Title
US5196360A (en) Methods for inhibiting outgrowth of silicide in self-aligned silicide process
JPH0367334B2 (enrdf_load_stackoverflow)
KR20030044800A (ko) 저저항 게이트 전극을 구비하는 반도체 장치
JPS61137367A (ja) 半導体集積回路装置の製造方法
JP3626773B2 (ja) 半導体デバイスの導電層、ｍｏｓｆｅｔ及びそれらの製造方法
JPS6298642A (ja) 半導体集積回路装置の製造方法
JP3336604B2 (ja) 半導体装置の製造方法
JPH03227516A (ja) 半導体装置の製造方法
JPS6257235A (ja) 半導体装置の製造方法
JPH08204188A (ja) 半導体装置およびその製造方法
KR100200184B1 (ko) 반도체 장치의 제조방법
KR0137435B1 (ko) 반도체 장치의 티타늄 실리사이드층 형성방법
JP2621136B2 (ja) 半導体装置の製造方法
JP2616034B2 (ja) 半導体集積回路装置
JPH04303944A (ja) 半導体装置の製造方法
JPS5836505B2 (ja) 半導体記憶装置の製造方法
JP3095452B2 (ja) 半導体素子の製造方法
JPH0227769A (ja) 半導体装置
JPH0730108A (ja) Ｍｉｓ型半導体装置及びその製造方法
JPH08264482A (ja) 半導体装置の製造方法
JP2668380B2 (ja) 半導体装置の製造方法
JP3123182B2 (ja) 半導体装置及びその製造方法
JP2817209B2 (ja) 半導体装置の製造方法
JPH0441510B2 (enrdf_load_stackoverflow)
JPS63227058A (ja) 高融点金属シリサイドゲ−トｍｏｓ電界効果トランジスタ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term