JPS625659A - ヘテロ接合バイポ−ラトランジスタおよびその製造方法 - Google Patents

ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Info

Publication number
JPS625659A
JPS625659A JP60145556A JP14555685A JPS625659A JP S625659 A JPS625659 A JP S625659A JP 60145556 A JP60145556 A JP 60145556A JP 14555685 A JP14555685 A JP 14555685A JP S625659 A JPS625659 A JP S625659A
Authority
JP
Japan
Prior art keywords
base
emitter
region
collector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60145556A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0577173B2 (enrdf_load_html_response
Inventor
Kazuo Eda
江田　和生
Masaki Inada
稲田　雅紀
Toshimichi Oota
順道 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60145556A priority Critical patent/JPS625659A/ja
Publication of JPS625659A publication Critical patent/JPS625659A/ja
Publication of JPH0577173B2 publication Critical patent/JPH0577173B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60145556A 1985-07-02 1985-07-02 ヘテロ接合バイポ−ラトランジスタおよびその製造方法 Granted JPS625659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60145556A JPS625659A (ja) 1985-07-02 1985-07-02 ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60145556A JPS625659A (ja) 1985-07-02 1985-07-02 ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS625659A true JPS625659A (ja) 1987-01-12
JPH0577173B2 JPH0577173B2 (enrdf_load_html_response) 1993-10-26

Family

ID=15387893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60145556A Granted JPS625659A (ja) 1985-07-02 1985-07-02 ヘテロ接合バイポ−ラトランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS625659A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967253A (en) * 1988-08-31 1990-10-30 International Business Machines Corporation Bipolar transistor integrated circuit technology
US4967252A (en) * 1988-03-18 1990-10-30 501 Fujitsu Limited Compound semiconductor bipolar device with side wall contact
US5064772A (en) * 1988-08-31 1991-11-12 International Business Machines Corporation Bipolar transistor integrated circuit technology

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967252A (en) * 1988-03-18 1990-10-30 501 Fujitsu Limited Compound semiconductor bipolar device with side wall contact
US4967253A (en) * 1988-08-31 1990-10-30 International Business Machines Corporation Bipolar transistor integrated circuit technology
US5064772A (en) * 1988-08-31 1991-11-12 International Business Machines Corporation Bipolar transistor integrated circuit technology

Also Published As

Publication number Publication date
JPH0577173B2 (enrdf_load_html_response) 1993-10-26

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