JPS6255703B2 - - Google Patents
Info
- Publication number
- JPS6255703B2 JPS6255703B2 JP2876280A JP2876280A JPS6255703B2 JP S6255703 B2 JPS6255703 B2 JP S6255703B2 JP 2876280 A JP2876280 A JP 2876280A JP 2876280 A JP2876280 A JP 2876280A JP S6255703 B2 JPS6255703 B2 JP S6255703B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- organosiloxane resin
- resin film
- wiring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 125000005375 organosiloxane group Chemical group 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 9
- 239000011368 organic material Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2876280A JPS56125855A (en) | 1980-03-07 | 1980-03-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2876280A JPS56125855A (en) | 1980-03-07 | 1980-03-07 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56125855A JPS56125855A (en) | 1981-10-02 |
| JPS6255703B2 true JPS6255703B2 (de) | 1987-11-20 |
Family
ID=12257412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2876280A Granted JPS56125855A (en) | 1980-03-07 | 1980-03-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56125855A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5945946A (ja) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | 中空糸状多孔質ガラスの製造法 |
| GB2137808A (en) * | 1983-04-06 | 1984-10-10 | Plessey Co Plc | Integrated circuit processing method |
| JPH0691068B2 (ja) * | 1985-04-02 | 1994-11-14 | 株式会社日立製作所 | 薄膜形成方法 |
| JP2542075B2 (ja) * | 1989-02-23 | 1996-10-09 | 三菱電機株式会社 | シリコ―ンラダ―系樹脂にパタ―ンを転写する方法およびそれに用いるエッチング液 |
| JP2718231B2 (ja) * | 1990-01-10 | 1998-02-25 | 三菱電機株式会社 | 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法 |
| JP2923408B2 (ja) * | 1992-12-21 | 1999-07-26 | 三菱電機株式会社 | 高純度シリコーンラダーポリマーの製造方法 |
-
1980
- 1980-03-07 JP JP2876280A patent/JPS56125855A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56125855A (en) | 1981-10-02 |
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