JPS6254962A - トランジスタ - Google Patents

トランジスタ

Info

Publication number
JPS6254962A
JPS6254962A JP60196246A JP19624685A JPS6254962A JP S6254962 A JPS6254962 A JP S6254962A JP 60196246 A JP60196246 A JP 60196246A JP 19624685 A JP19624685 A JP 19624685A JP S6254962 A JPS6254962 A JP S6254962A
Authority
JP
Japan
Prior art keywords
gate electrode
transistor
floating gate
channel region
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60196246A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0577189B2 (fr
Inventor
Shuichi Oya
大屋　秀市
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60196246A priority Critical patent/JPS6254962A/ja
Publication of JPS6254962A publication Critical patent/JPS6254962A/ja
Publication of JPH0577189B2 publication Critical patent/JPH0577189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP60196246A 1985-09-04 1985-09-04 トランジスタ Granted JPS6254962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60196246A JPS6254962A (ja) 1985-09-04 1985-09-04 トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60196246A JPS6254962A (ja) 1985-09-04 1985-09-04 トランジスタ

Publications (2)

Publication Number Publication Date
JPS6254962A true JPS6254962A (ja) 1987-03-10
JPH0577189B2 JPH0577189B2 (fr) 1993-10-26

Family

ID=16354615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60196246A Granted JPS6254962A (ja) 1985-09-04 1985-09-04 トランジスタ

Country Status (1)

Country Link
JP (1) JPS6254962A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63268194A (ja) * 1987-04-24 1988-11-04 Toshiba Corp 不揮発性半導体メモリ
JPS6421970A (en) * 1987-07-16 1989-01-25 Nec Corp Nonvolatile semiconductor memory device
JPS6450298A (en) * 1987-08-21 1989-02-27 Toshiba Corp Non-volatile semiconductor memory
JPH01119069A (ja) * 1987-10-30 1989-05-11 Nec Corp 不揮発性半導体記憶装置
EP0472241A2 (fr) * 1990-08-21 1992-02-26 Philips Patentverwaltung GmbH Mémoire à semi-conducteurs électriquement programmable et effaçable et sa méthode d'opération
JPH04233768A (ja) * 1990-08-21 1992-08-21 Philips Gloeilampenfab:Nv 半導体メモリ及びその動作方法
US5323039A (en) * 1988-10-21 1994-06-21 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method of manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63268194A (ja) * 1987-04-24 1988-11-04 Toshiba Corp 不揮発性半導体メモリ
JPS6421970A (en) * 1987-07-16 1989-01-25 Nec Corp Nonvolatile semiconductor memory device
JPS6450298A (en) * 1987-08-21 1989-02-27 Toshiba Corp Non-volatile semiconductor memory
JPH01119069A (ja) * 1987-10-30 1989-05-11 Nec Corp 不揮発性半導体記憶装置
US5323039A (en) * 1988-10-21 1994-06-21 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method of manufacturing the same
EP0639860A1 (fr) * 1988-10-21 1995-02-22 Kabushiki Kaisha Toshiba Mémoire semi-conductrice rémanente
US5824583A (en) * 1988-10-21 1998-10-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method of manufacturing the same
EP0472241A2 (fr) * 1990-08-21 1992-02-26 Philips Patentverwaltung GmbH Mémoire à semi-conducteurs électriquement programmable et effaçable et sa méthode d'opération
JPH04233768A (ja) * 1990-08-21 1992-08-21 Philips Gloeilampenfab:Nv 半導体メモリ及びその動作方法
JPH04233769A (ja) * 1990-08-21 1992-08-21 Philips Gloeilampenfab:Nv 半導体メモリ
EP0472241B1 (fr) * 1990-08-21 1998-05-06 Philips Patentverwaltung GmbH Mémoire à semi-conducteurs électriquement programmable et effaçable et sa méthode d'opération

Also Published As

Publication number Publication date
JPH0577189B2 (fr) 1993-10-26

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