JPS6253952B2 - - Google Patents

Info

Publication number
JPS6253952B2
JPS6253952B2 JP54126521A JP12652179A JPS6253952B2 JP S6253952 B2 JPS6253952 B2 JP S6253952B2 JP 54126521 A JP54126521 A JP 54126521A JP 12652179 A JP12652179 A JP 12652179A JP S6253952 B2 JPS6253952 B2 JP S6253952B2
Authority
JP
Japan
Prior art keywords
substrate
transistor
shaped groove
well
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54126521A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5650558A (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP12652179A priority Critical patent/JPS5650558A/ja
Publication of JPS5650558A publication Critical patent/JPS5650558A/ja
Publication of JPS6253952B2 publication Critical patent/JPS6253952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP12652179A 1979-10-01 1979-10-01 Complementary mos integrated circuit Granted JPS5650558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12652179A JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12652179A JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Publications (2)

Publication Number Publication Date
JPS5650558A JPS5650558A (en) 1981-05-07
JPS6253952B2 true JPS6253952B2 (enrdf_load_stackoverflow) 1987-11-12

Family

ID=14937257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12652179A Granted JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5650558A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501736A (ja) * 1984-03-29 1986-08-14 ヒユ−ズ・エアクラフト・カンパニ− Ｖｌｓｉ用ラッチ・アップ抵抗性ｃｍｏｓ構造
DE10131705B4 (de) 2001-06-29 2010-03-18 Atmel Automotive Gmbh Verfahren zur Herstellung eines DMOS-Transistors
DE10131706B4 (de) 2001-06-29 2005-10-06 Atmel Germany Gmbh Verfahren zur Herstellung eines DMOS-Transistors
DE10131707B4 (de) 2001-06-29 2009-12-03 Atmel Automotive Gmbh Verfahren zur Herstellung eines DMOS-Transistors und dessen Verwendung zur Herstellung einer integrierten Schaltung
DE10131704A1 (de) 2001-06-29 2003-01-16 Atmel Germany Gmbh Verfahren zur Dotierung eines Halbleiterkörpers
DE10345347A1 (de) 2003-09-19 2005-04-14 Atmel Germany Gmbh Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151080A (enrdf_load_stackoverflow) * 1974-05-23 1975-12-04
JPS53147469A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Vertical field effect transistor and production of the same

Also Published As

Publication number Publication date
JPS5650558A (en) 1981-05-07

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