JPS6252473B2 - - Google Patents

Info

Publication number
JPS6252473B2
JPS6252473B2 JP53124903A JP12490378A JPS6252473B2 JP S6252473 B2 JPS6252473 B2 JP S6252473B2 JP 53124903 A JP53124903 A JP 53124903A JP 12490378 A JP12490378 A JP 12490378A JP S6252473 B2 JPS6252473 B2 JP S6252473B2
Authority
JP
Japan
Prior art keywords
depletion layer
potential
layer
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53124903A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5552266A (en
Inventor
Shinji Morozumi
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP12490378A priority Critical patent/JPS5552266A/ja
Publication of JPS5552266A publication Critical patent/JPS5552266A/ja
Publication of JPS6252473B2 publication Critical patent/JPS6252473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP12490378A 1978-10-11 1978-10-11 Semiconductor integrated circuit Granted JPS5552266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12490378A JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12490378A JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62133883A Division JPS6325965A (ja) 1987-05-29 1987-05-29 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS5552266A JPS5552266A (en) 1980-04-16
JPS6252473B2 true JPS6252473B2 (enrdf_load_html_response) 1987-11-05

Family

ID=14896952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12490378A Granted JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5552266A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313871U (enrdf_load_html_response) * 1989-06-23 1991-02-13

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen
DE68910445T2 (de) * 1988-09-01 1994-02-24 Fujitsu Ltd Integrierter Halbleiterschaltkreis.
KR930011223A (ko) * 1992-06-16 1993-06-24 김광호 바이씨모스 트랜지스터 및 그 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313871U (enrdf_load_html_response) * 1989-06-23 1991-02-13

Also Published As

Publication number Publication date
JPS5552266A (en) 1980-04-16

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