JPS6252473B2 - - Google Patents
Info
- Publication number
- JPS6252473B2 JPS6252473B2 JP53124903A JP12490378A JPS6252473B2 JP S6252473 B2 JPS6252473 B2 JP S6252473B2 JP 53124903 A JP53124903 A JP 53124903A JP 12490378 A JP12490378 A JP 12490378A JP S6252473 B2 JPS6252473 B2 JP S6252473B2
- Authority
- JP
- Japan
- Prior art keywords
- depletion layer
- potential
- layer
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12490378A JPS5552266A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12490378A JPS5552266A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62133883A Division JPS6325965A (ja) | 1987-05-29 | 1987-05-29 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5552266A JPS5552266A (en) | 1980-04-16 |
JPS6252473B2 true JPS6252473B2 (enrdf_load_html_response) | 1987-11-05 |
Family
ID=14896952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12490378A Granted JPS5552266A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552266A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0313871U (enrdf_load_html_response) * | 1989-06-23 | 1991-02-13 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4684971A (en) * | 1981-03-13 | 1987-08-04 | American Telephone And Telegraph Company, At&T Bell Laboratories | Ion implanted CMOS devices |
NL8104862A (nl) * | 1981-10-28 | 1983-05-16 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
DE3340560A1 (de) * | 1983-11-09 | 1985-05-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen |
DE68910445T2 (de) * | 1988-09-01 | 1994-02-24 | Fujitsu Ltd | Integrierter Halbleiterschaltkreis. |
KR930011223A (ko) * | 1992-06-16 | 1993-06-24 | 김광호 | 바이씨모스 트랜지스터 및 그 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5226177A (en) * | 1975-08-25 | 1977-02-26 | Toshiba Corp | Semi-conductor unit |
-
1978
- 1978-10-11 JP JP12490378A patent/JPS5552266A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0313871U (enrdf_load_html_response) * | 1989-06-23 | 1991-02-13 |
Also Published As
Publication number | Publication date |
---|---|
JPS5552266A (en) | 1980-04-16 |