JPS6252454B2 - - Google Patents

Info

Publication number
JPS6252454B2
JPS6252454B2 JP54087025A JP8702579A JPS6252454B2 JP S6252454 B2 JPS6252454 B2 JP S6252454B2 JP 54087025 A JP54087025 A JP 54087025A JP 8702579 A JP8702579 A JP 8702579A JP S6252454 B2 JPS6252454 B2 JP S6252454B2
Authority
JP
Japan
Prior art keywords
pattern
alignment
buried
unevenness
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54087025A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5612745A (en
Inventor
Isamu Takashima
Tooru Suganuma
Hisashi Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8702579A priority Critical patent/JPS5612745A/ja
Publication of JPS5612745A publication Critical patent/JPS5612745A/ja
Publication of JPS6252454B2 publication Critical patent/JPS6252454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0145
    • H10W10/17

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8702579A 1979-07-10 1979-07-10 Production of semiconductor device Granted JPS5612745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612745A JPS5612745A (en) 1981-02-07
JPS6252454B2 true JPS6252454B2 (enExample) 1987-11-05

Family

ID=13903409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8702579A Granted JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5612745A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPS6336033U (enExample) * 1986-08-22 1988-03-08

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434770A (en) * 1977-08-24 1979-03-14 Nec Corp Semiconductor substrate and manufacture of semiconductor using it

Also Published As

Publication number Publication date
JPS5612745A (en) 1981-02-07

Similar Documents

Publication Publication Date Title
JPS6135693B2 (enExample)
US5910830A (en) Liquid crystal display panels including alignment keys in the active regions thereof, and methods for manufacturing
JPS6252454B2 (enExample)
JPH01214040A (ja) 半導体集積回路の製造方法
US7830027B2 (en) Level realignment following an epitaxy step
JPH1027944A (ja) 光半導体素子とその製造方法,及び光半導体モジュールとその製造方法
JPS60229334A (ja) 半導体装置の製造方法
JPS6023983Y2 (ja) 半導体装置用パッケ−ジ
JP2828806B2 (ja) 半導体装置の製造方法
JPS63108717A (ja) 半導体装置の製造方法
JPH05152181A (ja) Soi基板の製造方法および製造装置
JP3092495B2 (ja) 目合わせ方法及び目合わせ位置検査方法
JPS6161419A (ja) パタ−ン合わせ方法
KR0143576B1 (ko) 오버레이 측정용 패턴
JPS62128118A (ja) 半導体装置
JPH0555111A (ja) 半導体装置の製造方法
JPS6127630A (ja) 半導体装置の製造方法
JPS6243142A (ja) 半導体装置及びその使用方法
JPS6153856B2 (enExample)
JPS6185825A (ja) 半導体装置の製造方法
KR20010056784A (ko) 반도체 소자의 오버레이 측정패턴 형성방법
KR100242634B1 (ko) 반도체 장치의 패드 구조 및 그 제조방법
KR100317581B1 (ko) 프레임인프레임메사구조의마스크를이용한중첩도마크형성방법
JPH01274451A (ja) 半導体集積回路
JPH01310552A (ja) 半導体基板