JPS6252398B2 - - Google Patents

Info

Publication number
JPS6252398B2
JPS6252398B2 JP57090604A JP9060482A JPS6252398B2 JP S6252398 B2 JPS6252398 B2 JP S6252398B2 JP 57090604 A JP57090604 A JP 57090604A JP 9060482 A JP9060482 A JP 9060482A JP S6252398 B2 JPS6252398 B2 JP S6252398B2
Authority
JP
Japan
Prior art keywords
memory cell
point
potential
amplifier
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57090604A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58208990A (ja
Inventor
Kyokazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57090604A priority Critical patent/JPS58208990A/ja
Publication of JPS58208990A publication Critical patent/JPS58208990A/ja
Publication of JPS6252398B2 publication Critical patent/JPS6252398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP57090604A 1982-05-28 1982-05-28 記憶装置 Granted JPS58208990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57090604A JPS58208990A (ja) 1982-05-28 1982-05-28 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090604A JPS58208990A (ja) 1982-05-28 1982-05-28 記憶装置

Publications (2)

Publication Number Publication Date
JPS58208990A JPS58208990A (ja) 1983-12-05
JPS6252398B2 true JPS6252398B2 (cs) 1987-11-05

Family

ID=14003070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090604A Granted JPS58208990A (ja) 1982-05-28 1982-05-28 記憶装置

Country Status (1)

Country Link
JP (1) JPS58208990A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186197A (ja) * 1983-04-07 1984-10-22 Toshiba Corp 不揮発性半導体記憶装置
JPS60150297A (ja) * 1984-01-13 1985-08-07 Nec Corp 記憶装置
JPH01220295A (ja) * 1988-02-29 1989-09-01 Nec Corp 半導体記憶装置
JPH0668685A (ja) * 1993-04-19 1994-03-11 Hitachi Ltd 半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1497210A (en) * 1975-05-13 1978-01-05 Ncr Co Matrix memory

Also Published As

Publication number Publication date
JPS58208990A (ja) 1983-12-05

Similar Documents

Publication Publication Date Title
JP2800740B2 (ja) 半導体記憶装置
US5262984A (en) Non-volatile memory device capable of storing multi-state data
TW201835907A (zh) 非揮發性半導體記憶裝置
JPS6322395B2 (cs)
JP2003536200A (ja) 不揮発性メモリにおける高速感知のための基準セル
JPS63244500A (ja) 半導体不揮発性記憶装置
JP2723015B2 (ja) 半導体記憶装置
JPH0346915B2 (cs)
US6529422B1 (en) Input stage apparatus and method having a variable reference voltage
JPH02282995A (ja) 半導体記憶装置
US6373767B1 (en) Memory that stores multiple bits per storage cell
US20030102891A1 (en) High speed digital signal buffer and method
JPS6252398B2 (cs)
JPS6142352B2 (cs)
JP2672721B2 (ja) センスアンプ回路
JP2011159355A (ja) 半導体記憶装置
JP2001014879A (ja) 不揮発性メモリの読み出し回路
JPS60179998A (ja) 電圧検出回路
US20070035993A1 (en) Semiconductor device and method of generating a reference voltage therefor
US6707725B2 (en) Reference voltage generation circuit for semiconductor memory device, memory reading circuit including same, and electronic information device including the same
JP3828694B2 (ja) 半導体メモリ装置のセンシング回路並びにこれを用いたセンシング方法
JPS589287A (ja) 不揮発性半導体メモリ
JPS6231433B2 (cs)
US6285602B1 (en) Semiconductor memory device provided with I/O clamp circuit
JP2000200890A (ja) 半導体ｍｏｓ／バイポ―ラ複合トランジスタおよびこれを利用した半導体メモリ素子