JPS6251508B2 - - Google Patents

Info

Publication number
JPS6251508B2
JPS6251508B2 JP11975882A JP11975882A JPS6251508B2 JP S6251508 B2 JPS6251508 B2 JP S6251508B2 JP 11975882 A JP11975882 A JP 11975882A JP 11975882 A JP11975882 A JP 11975882A JP S6251508 B2 JPS6251508 B2 JP S6251508B2
Authority
JP
Japan
Prior art keywords
voltage
output
reset
diffusion layer
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11975882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5911680A (ja
Inventor
Shuzo Matsumoto
Kazuo Kondo
Isao Akitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11975882A priority Critical patent/JPS5911680A/ja
Publication of JPS5911680A publication Critical patent/JPS5911680A/ja
Publication of JPS6251508B2 publication Critical patent/JPS6251508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Networks Using Active Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP11975882A 1982-07-12 1982-07-12 電荷転送装置 Granted JPS5911680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11975882A JPS5911680A (ja) 1982-07-12 1982-07-12 電荷転送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11975882A JPS5911680A (ja) 1982-07-12 1982-07-12 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS5911680A JPS5911680A (ja) 1984-01-21
JPS6251508B2 true JPS6251508B2 (ko) 1987-10-30

Family

ID=14769435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11975882A Granted JPS5911680A (ja) 1982-07-12 1982-07-12 電荷転送装置

Country Status (1)

Country Link
JP (1) JPS5911680A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132668A (ja) * 1983-01-19 1984-07-30 Toshiba Corp 電荷転送素子の出力装置
JPS61131854U (ko) * 1985-02-06 1986-08-18
US5247554A (en) * 1987-01-16 1993-09-21 Kabushiki Kaisha Toshiba Charge detection circuit
EP0481531B1 (en) * 1987-05-21 1994-11-30 Kabushiki Kaisha Toshiba Charge transfer device
JP2672507B2 (ja) * 1987-05-21 1997-11-05 株式会社東芝 電荷転送素子
JPS63300561A (ja) * 1987-05-29 1988-12-07 Nec Corp 半導体装置
KR920007353B1 (ko) * 1990-03-19 1992-08-31 삼성전자 주식회사 일시화면정지기능을 가지는 고체영상소자
JPH0423334A (ja) * 1990-05-14 1992-01-27 Nec Corp 電荷転送装置
US9135987B2 (en) 2013-07-01 2015-09-15 Internatinal Business Machines Corporation FinFET-based boosting supply voltage circuit and method

Also Published As

Publication number Publication date
JPS5911680A (ja) 1984-01-21

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