JPS6248358B2 - - Google Patents
Info
- Publication number
- JPS6248358B2 JPS6248358B2 JP57133929A JP13392982A JPS6248358B2 JP S6248358 B2 JPS6248358 B2 JP S6248358B2 JP 57133929 A JP57133929 A JP 57133929A JP 13392982 A JP13392982 A JP 13392982A JP S6248358 B2 JPS6248358 B2 JP S6248358B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- back electrode
- electrode
- thin film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57133929A JPS5923492A (ja) | 1982-07-30 | 1982-07-30 | 薄膜ｅｌ素子の電極形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57133929A JPS5923492A (ja) | 1982-07-30 | 1982-07-30 | 薄膜ｅｌ素子の電極形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5923492A JPS5923492A (ja) | 1984-02-06 |
| JPS6248358B2 true JPS6248358B2 (enrdf_load_stackoverflow) | 1987-10-13 |
Family
ID=15116373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57133929A Granted JPS5923492A (ja) | 1982-07-30 | 1982-07-30 | 薄膜ｅｌ素子の電極形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5923492A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62110987U (enrdf_load_stackoverflow) * | 1985-12-27 | 1987-07-15 |
-
1982
- 1982-07-30 JP JP57133929A patent/JPS5923492A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5923492A (ja) | 1984-02-06 |
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