JPS6246976B2 - - Google Patents

Info

Publication number
JPS6246976B2
JPS6246976B2 JP53086226A JP8622678A JPS6246976B2 JP S6246976 B2 JPS6246976 B2 JP S6246976B2 JP 53086226 A JP53086226 A JP 53086226A JP 8622678 A JP8622678 A JP 8622678A JP S6246976 B2 JPS6246976 B2 JP S6246976B2
Authority
JP
Japan
Prior art keywords
incident
alignment mark
electron beam
shaped groove
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53086226A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5512784A (en
Inventor
Hisaaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP8622678A priority Critical patent/JPS5512784A/ja
Publication of JPS5512784A publication Critical patent/JPS5512784A/ja
Publication of JPS6246976B2 publication Critical patent/JPS6246976B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)
JP8622678A 1978-07-14 1978-07-14 Location mark for electron beam exposure Granted JPS5512784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8622678A JPS5512784A (en) 1978-07-14 1978-07-14 Location mark for electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8622678A JPS5512784A (en) 1978-07-14 1978-07-14 Location mark for electron beam exposure

Publications (2)

Publication Number Publication Date
JPS5512784A JPS5512784A (en) 1980-01-29
JPS6246976B2 true JPS6246976B2 (enrdf_load_stackoverflow) 1987-10-06

Family

ID=13880866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8622678A Granted JPS5512784A (en) 1978-07-14 1978-07-14 Location mark for electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5512784A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188776U (enrdf_load_stackoverflow) * 1987-05-22 1988-12-05
JPH0289574U (enrdf_load_stackoverflow) * 1988-12-23 1990-07-16
JPH02502863A (ja) * 1987-03-31 1990-09-06 インテル マルケティング オサケヒティオ コイン等を識別する装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870554U (ja) * 1981-11-09 1983-05-13 トヨタ自動車株式会社 ダンパプ−リ
JPS58180022A (ja) * 1982-04-14 1983-10-21 Sanyo Electric Co Ltd 電子ビ−ム露光における位置合せ方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539475A (en) * 1976-07-12 1978-01-27 Ibm Device for detecting position of electron beam

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02502863A (ja) * 1987-03-31 1990-09-06 インテル マルケティング オサケヒティオ コイン等を識別する装置
JPS63188776U (enrdf_load_stackoverflow) * 1987-05-22 1988-12-05
JPH0289574U (enrdf_load_stackoverflow) * 1988-12-23 1990-07-16

Also Published As

Publication number Publication date
JPS5512784A (en) 1980-01-29

Similar Documents

Publication Publication Date Title
Hatzakis Electron resists for microcircuit and mask production
US5656397A (en) Mask having a phase shifter and method of manufacturing same
US6004875A (en) Etch stop for use in etching of silicon oxide
JP3755228B2 (ja) 荷電粒子線露光装置
US6051346A (en) Process for fabricating a lithographic mask
Matsui et al. High‐resolution focused ion beam lithography
JP2746125B2 (ja) 電子線露光装置の装置較正用基準マーク及び装置較正方法。
JPS6246976B2 (enrdf_load_stackoverflow)
JPH0222809A (ja) 電子ビームを用いて位置合わせマークの位置を検出する方法及び装置
US5064748A (en) Method for anisotropically hardening a protective coating for integrated circuit manufacture
US4826754A (en) Method for anisotropically hardening a protective coating for integrated circuit manufacture
JP2705338B2 (ja) 測長sem用基準サンプルの製造方法
JPH04115517A (ja) 位置合せマーク形成方法
US6383693B1 (en) Method of forming a photomask utilizing electron beam dosage compensation method employing dummy pattern
Wong et al. Fabrication of sub‐20 nm trenches in silicon nitride using CHF3/O2 reactive ion etching and oblique metallization
JP2001015413A (ja) アライメントマーク及びアライメントマークの形成方法
US6455332B1 (en) Methodology to mitigate electron beam induced charge dissipation on polysilicon fine patterning
JP2620952B2 (ja) 微細パターン形成方法
JP2002333702A (ja) プラズマエッチング方法及びフォトマスクの製造方法
Atwood et al. Improved accuracy for SEM linewidth measurements
JPH02192714A (ja) レジストパターンの形成方法
US6821693B2 (en) Method for adjusting a multilevel phase-shifting mask or reticle
Rhee et al. Patterning tungsten films with an electron beam lithography system at 50 keV for x‐ray mask applications
JPH0590300A (ja) 半導体装置の製造方法
JP3170057B2 (ja) エネルギービーム径測定方法