JPS6246530A - 金属層のエツチング終点の検出方法 - Google Patents
金属層のエツチング終点の検出方法Info
- Publication number
- JPS6246530A JPS6246530A JP18628985A JP18628985A JPS6246530A JP S6246530 A JPS6246530 A JP S6246530A JP 18628985 A JP18628985 A JP 18628985A JP 18628985 A JP18628985 A JP 18628985A JP S6246530 A JPS6246530 A JP S6246530A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- metal layer
- wafer
- electrode
- end point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 52
- 238000001514 detection method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007654 immersion Methods 0.000 abstract description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052697 platinum Inorganic materials 0.000 abstract description 5
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 40
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18628985A JPS6246530A (ja) | 1985-08-23 | 1985-08-23 | 金属層のエツチング終点の検出方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18628985A JPS6246530A (ja) | 1985-08-23 | 1985-08-23 | 金属層のエツチング終点の検出方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6246530A true JPS6246530A (ja) | 1987-02-28 |
| JPH0562818B2 JPH0562818B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=16185703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18628985A Granted JPS6246530A (ja) | 1985-08-23 | 1985-08-23 | 金属層のエツチング終点の検出方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6246530A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863411A (en) * | 1995-09-13 | 1999-01-26 | Samsung Electronics Co., Ltd. | Method for forming a minute pattern in a metal workpiece |
| CN110148568A (zh) * | 2019-05-07 | 2019-08-20 | 深圳市华星光电技术有限公司 | 薄膜晶体管基板金属层的金属蚀刻终点测定方法 |
| CN111564366A (zh) * | 2019-02-14 | 2020-08-21 | 株式会社迪思科 | 蚀刻方法 |
-
1985
- 1985-08-23 JP JP18628985A patent/JPS6246530A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863411A (en) * | 1995-09-13 | 1999-01-26 | Samsung Electronics Co., Ltd. | Method for forming a minute pattern in a metal workpiece |
| CN111564366A (zh) * | 2019-02-14 | 2020-08-21 | 株式会社迪思科 | 蚀刻方法 |
| JP2020136332A (ja) * | 2019-02-14 | 2020-08-31 | 株式会社ディスコ | エッチング方法 |
| CN110148568A (zh) * | 2019-05-07 | 2019-08-20 | 深圳市华星光电技术有限公司 | 薄膜晶体管基板金属层的金属蚀刻终点测定方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562818B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4957583A (en) | Apparatus for etching patterned substrates | |
| JPS6246530A (ja) | 金属層のエツチング終点の検出方法 | |
| EP0035529A4 (en) | METHOD FOR PRODUCING AN ARRANGEMENT USING STRIPED PATTERNS IN THIN FILMS. | |
| JPS6246531A (ja) | 金属層のエツチング終点の検出方法 | |
| US5403466A (en) | Silver plating process for lead frames | |
| JPS58141531A (ja) | 半導体素子用金属薄膜エツチング装置 | |
| US4829658A (en) | Method for manufacturing terminal contacts for thin-film magnetic heads | |
| US6511860B1 (en) | Method for manufacturing a thermopile on an electrically insulating substrate | |
| JPH0845888A (ja) | 純水洗浄装置 | |
| JPH04217324A (ja) | 半導体装置の製造方法 | |
| JPS6326537B2 (enrdf_load_stackoverflow) | ||
| JPH0869954A (ja) | 現像終了基準時点検出方法 | |
| KR0156172B1 (ko) | 반도체 소자의 테스트패턴 형성방법 | |
| KR19980067203A (ko) | 반도체 장치의 스페이서 형성방법 | |
| JP2877168B2 (ja) | 集積回路装置用バンプ電極の製造方法 | |
| JPS6282305A (ja) | 鍍膜厚測定用モニタパタ−ン | |
| JPS58108728A (ja) | 成膜終点検知方法 | |
| JPS5950221B2 (ja) | 半導体装置の製造方法 | |
| KR100456394B1 (ko) | 반도체제조장치및이를채용한반도체소자의배선형성방법 | |
| JPH0350733A (ja) | 半導体装置の製造方法 | |
| JPH01147848A (ja) | Ic用リードフレームの製造方法 | |
| JPH05109659A (ja) | 半導体装置の製造方法 | |
| JPH0144014B2 (enrdf_load_stackoverflow) | ||
| US20020094692A1 (en) | Method for carrying out a plasma etching process | |
| JPS5871615A (ja) | 半導体装置の製造方法 |