JPS624150U - - Google Patents

Info

Publication number
JPS624150U
JPS624150U JP1986084003U JP8400386U JPS624150U JP S624150 U JPS624150 U JP S624150U JP 1986084003 U JP1986084003 U JP 1986084003U JP 8400386 U JP8400386 U JP 8400386U JP S624150 U JPS624150 U JP S624150U
Authority
JP
Japan
Prior art keywords
charge
semiconductor device
coupled semiconductor
buried
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1986084003U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS624150U publication Critical patent/JPS624150U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Description

【図面の簡単な説明】
第１図は本考案の実施例の断面図、第２図と第
３図は本考案による電荷結合半導体素子の製造工
程の二つの段階を示す断面図、第４図は第１図の
実施例の動作原理の説明図である。 １……半導体基板、２……絶縁層、３……電極
、３１……電極の前方縁端、３２……電極の後方
縁端、４……埋込領域、４１……埋込領域の前方
縁端、４２……埋込領域の後方縁端部分。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ 第一導電形の半導体基板１と、半導体基板１
    上にある絶縁層２上に設けられた一連の電極３と
    、半導体基板１内に配置された第二導電形の一連
    の埋込領域４とを備え、電荷転送方向に見て、前
    記電極３の各後方縁端３２は半導体基板１の平面
    に対し垂直な方向において前記埋込領域４の前方
    縁端の上方にかつこの前方縁端と重なり合わない
    ように存在し、電極３の各前方縁端３１は次に続
    く埋込領域４の後方縁端部分４２と重なり合うよ
    うに存在し、放射センサとして構成されているこ
    とを特徴とする電荷結合半導体素子。 ２ 埋込領域がイオン注入によつてドープされて
    いることを特徴とする実用新案登録請求の範囲第
    １項記載の電荷結合半導体素子。 ３ 基板がキヤリヤ濃度約１０１４cm−３のｐ形
    シリコンであることを特徴とする実用新案登録請
    求の範囲第１項または第２項記載の電荷結合半導
    体素子。 ４ 埋込領域がキヤリヤ濃度約１０１７cm−３に
    ｎ形にドープされていることを特徴とする実用新
    案登録請求の範囲第１項ないし第３項のいずれか
    一つに記載の電荷結合半導体素子。 ５ 埋込領域が基板表面から５０〜１０００ｎｍ
    離れて存在し、深さ方向の拡がりが１０〜３００
    ｎｍであることを特徴とする実用新案登録請求の
    範囲第１項ないし第４項のいずれか一つに記載の
    電荷結合半導体素子。 ６ 埋込領域相互間の間隔が約５００ｎｍである
    ことを特徴とする実用新案登録請求の範囲第１項
    ないし第５項のいずれか一つに記載の電荷結合半
    導体素子。 ７ 可視光センサとして使用することを特徴とす
    る実用新案登録請求の範囲第１項ないし第６項の
    いずれか一つに記載の電荷結合半導体素子。
JP1986084003U 1977-03-29 1986-06-02 Pending JPS624150U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2713876A DE2713876C2 (de) 1977-03-29 1977-03-29 Ladungsgekoppeltes Element (CCD)

Publications (1)

Publication Number Publication Date
JPS624150U true JPS624150U (ja) 1987-01-12

Family

ID=6005013

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3358478A Pending JPS53121585A (en) 1977-03-29 1978-03-23 Charge coupled element and method of producing same
JP1986084003U Pending JPS624150U (ja) 1977-03-29 1986-06-02

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP3358478A Pending JPS53121585A (en) 1977-03-29 1978-03-23 Charge coupled element and method of producing same

Country Status (5)

Country Link
US (1) US4208668A (ja)
JP (2) JPS53121585A (ja)
DE (1) DE2713876C2 (ja)
FR (1) FR2386140A1 (ja)
GB (1) GB1556391A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313457B1 (en) 1999-01-25 2001-11-06 Gentex Corporation Moisture detecting system using semiconductor light sensor with integral charge collection
US6402328B1 (en) 1999-01-25 2002-06-11 Gentex Corporation Automatic dimming mirror using semiconductor light sensor with integral charge collection
US6359274B1 (en) 1999-01-25 2002-03-19 Gentex Corporation Photodiode light sensor
KR100682523B1 (ko) * 1999-01-25 2007-02-15 젠텍스 코포레이션 반도체 광 센서들을 가진 차량 기기 제어장치
US7543946B2 (en) * 2002-01-10 2009-06-09 Gentex Corporation Dimmable rearview assembly having a glare sensor
US8620523B2 (en) 2011-06-24 2013-12-31 Gentex Corporation Rearview assembly with multiple ambient light sensors
WO2013022731A1 (en) 2011-08-05 2013-02-14 Gentex Corporation Optical assembly for a light sensor
US9207116B2 (en) 2013-02-12 2015-12-08 Gentex Corporation Light sensor
US9870753B2 (en) 2013-02-12 2018-01-16 Gentex Corporation Light sensor having partially opaque optic

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4865878A (ja) * 1971-12-11 1973-09-10
JPS5172288A (ja) * 1974-12-20 1976-06-22 Fujitsu Ltd Handotaisochi

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
SE383573B (sv) * 1971-04-06 1976-03-15 Western Electric Co Laddningskopplad anordning
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
US3999208A (en) * 1972-10-18 1976-12-21 Hitachi, Ltd. Charge transfer semiconductor device
JPS4962089A (ja) * 1972-10-18 1974-06-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4865878A (ja) * 1971-12-11 1973-09-10
JPS5172288A (ja) * 1974-12-20 1976-06-22 Fujitsu Ltd Handotaisochi

Also Published As

Publication number Publication date
FR2386140A1 (fr) 1978-10-27
GB1556391A (en) 1979-11-21
US4208668A (en) 1980-06-17
DE2713876C2 (de) 1983-09-22
DE2713876A1 (de) 1978-10-05
JPS53121585A (en) 1978-10-24
FR2386140B1 (ja) 1983-01-21

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