FR2386140A1 - Dispositif a couplage direct de charge - Google Patents

Dispositif a couplage direct de charge

Info

Publication number
FR2386140A1
FR2386140A1 FR7808878A FR7808878A FR2386140A1 FR 2386140 A1 FR2386140 A1 FR 2386140A1 FR 7808878 A FR7808878 A FR 7808878A FR 7808878 A FR7808878 A FR 7808878A FR 2386140 A1 FR2386140 A1 FR 2386140A1
Authority
FR
France
Prior art keywords
direct charge
coupling device
charge coupling
edge
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7808878A
Other languages
English (en)
Other versions
FR2386140B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2386140A1 publication Critical patent/FR2386140A1/fr
Application granted granted Critical
Publication of FR2386140B1 publication Critical patent/FR2386140B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

L'invention concerne un dispositif à couplage direct de charge Dans ce dispositif, des régions dopées ensevelies 4, disposées selon une rangée et possédant le second type de conductivité, sont présentes dans le substrat semiconducteur 1, et respectivement le bord arrière 32 d'une électrode 3 est situé, sur une perpendiculaire au plan de la surface du substrat, au-dessus du bord avant 41 d'une région dopée 4, sans recouvrir ce bord 41 et respectivement le bord avant 31 de cette électrode 3 est en recouvrement au-dessus de la partie arrière 42 de la région dopée ensevelie 4 immédiatement suivante dans la rangée de ces régions 4. Application notamment aux dispositifs détecteurs de rayonnement
FR7808878A 1977-03-29 1978-03-28 Dispositif a couplage direct de charge Granted FR2386140A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2713876A DE2713876C2 (de) 1977-03-29 1977-03-29 Ladungsgekoppeltes Element (CCD)

Publications (2)

Publication Number Publication Date
FR2386140A1 true FR2386140A1 (fr) 1978-10-27
FR2386140B1 FR2386140B1 (fr) 1983-01-21

Family

ID=6005013

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7808878A Granted FR2386140A1 (fr) 1977-03-29 1978-03-28 Dispositif a couplage direct de charge

Country Status (5)

Country Link
US (1) US4208668A (fr)
JP (2) JPS53121585A (fr)
DE (1) DE2713876C2 (fr)
FR (1) FR2386140A1 (fr)
GB (1) GB1556391A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313457B1 (en) 1999-01-25 2001-11-06 Gentex Corporation Moisture detecting system using semiconductor light sensor with integral charge collection
US6359274B1 (en) 1999-01-25 2002-03-19 Gentex Corporation Photodiode light sensor
EP1147031B1 (fr) * 1999-01-25 2011-12-28 Gentex Corporation Commande d'equipement de vehicule avec capteurs de lumiere a semi-conducteurs
US6402328B1 (en) 1999-01-25 2002-06-11 Gentex Corporation Automatic dimming mirror using semiconductor light sensor with integral charge collection
US7543946B2 (en) * 2002-01-10 2009-06-09 Gentex Corporation Dimmable rearview assembly having a glare sensor
US8620523B2 (en) 2011-06-24 2013-12-31 Gentex Corporation Rearview assembly with multiple ambient light sensors
EP2740003B1 (fr) 2011-08-05 2017-06-14 Gentex Corporation Ensemble optique pour un capteur de lumière
US9870753B2 (en) 2013-02-12 2018-01-16 Gentex Corporation Light sensor having partially opaque optic
US9207116B2 (en) 2013-02-12 2015-12-08 Gentex Corporation Light sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132441A1 (fr) * 1971-04-06 1972-11-17 Western Electric Co
US3999208A (en) * 1972-10-18 1976-12-21 Hitachi, Ltd. Charge transfer semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
JPS5310838B2 (fr) * 1971-12-11 1978-04-17
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
JPS4962089A (fr) * 1972-10-18 1974-06-15
JPS5172288A (ja) * 1974-12-20 1976-06-22 Fujitsu Ltd Handotaisochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132441A1 (fr) * 1971-04-06 1972-11-17 Western Electric Co
US3999208A (en) * 1972-10-18 1976-12-21 Hitachi, Ltd. Charge transfer semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *
EXBK/75 *

Also Published As

Publication number Publication date
DE2713876A1 (de) 1978-10-05
US4208668A (en) 1980-06-17
DE2713876C2 (de) 1983-09-22
JPS53121585A (en) 1978-10-24
GB1556391A (en) 1979-11-21
JPS624150U (fr) 1987-01-12
FR2386140B1 (fr) 1983-01-21

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Legal Events

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