JPS6241429B2 - - Google Patents

Info

Publication number
JPS6241429B2
JPS6241429B2 JP55061419A JP6141980A JPS6241429B2 JP S6241429 B2 JPS6241429 B2 JP S6241429B2 JP 55061419 A JP55061419 A JP 55061419A JP 6141980 A JP6141980 A JP 6141980A JP S6241429 B2 JPS6241429 B2 JP S6241429B2
Authority
JP
Japan
Prior art keywords
melting point
film
point metal
high melting
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55061419A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56157066A (en
Inventor
Tadatoshi Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6141980A priority Critical patent/JPS56157066A/ja
Publication of JPS56157066A publication Critical patent/JPS56157066A/ja
Publication of JPS6241429B2 publication Critical patent/JPS6241429B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
JP6141980A 1980-05-09 1980-05-09 Manufacture of semiconductor device Granted JPS56157066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6141980A JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6141980A JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56157066A JPS56157066A (en) 1981-12-04
JPS6241429B2 true JPS6241429B2 (enExample) 1987-09-02

Family

ID=13170554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6141980A Granted JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157066A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323697A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd 電気部品のリード線切断成形方法および装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3523093B2 (ja) 1997-11-28 2004-04-26 株式会社東芝 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323697A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd 電気部品のリード線切断成形方法および装置

Also Published As

Publication number Publication date
JPS56157066A (en) 1981-12-04

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