JPS6240375A - 硬質カ−ボン膜 - Google Patents
硬質カ−ボン膜Info
- Publication number
- JPS6240375A JPS6240375A JP60179025A JP17902585A JPS6240375A JP S6240375 A JPS6240375 A JP S6240375A JP 60179025 A JP60179025 A JP 60179025A JP 17902585 A JP17902585 A JP 17902585A JP S6240375 A JPS6240375 A JP S6240375A
- Authority
- JP
- Japan
- Prior art keywords
- carbon film
- hard carbon
- film
- plasma cvd
- cvd method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021385 hard carbon Inorganic materials 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 26
- 239000011737 fluorine Substances 0.000 claims abstract description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000000862 absorption spectrum Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 abstract description 22
- 230000008021 deposition Effects 0.000 abstract description 21
- 239000007789 gas Substances 0.000 abstract description 20
- 229910052799 carbon Inorganic materials 0.000 abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 239000001257 hydrogen Substances 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 HOIN and Cu Chemical class 0.000 description 1
- 229910004020 SiCz Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Inorganic materials O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60179025A JPS6240375A (ja) | 1985-08-14 | 1985-08-14 | 硬質カ−ボン膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60179025A JPS6240375A (ja) | 1985-08-14 | 1985-08-14 | 硬質カ−ボン膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6240375A true JPS6240375A (ja) | 1987-02-21 |
| JPH0510426B2 JPH0510426B2 (enExample) | 1993-02-09 |
Family
ID=16058796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60179025A Granted JPS6240375A (ja) | 1985-08-14 | 1985-08-14 | 硬質カ−ボン膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6240375A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275850A (en) * | 1988-04-20 | 1994-01-04 | Hitachi, Ltd. | Process for producing a magnetic disk having a metal containing hard carbon coating by plasma chemical vapor deposition under a negative self bias |
| JPH0649645A (ja) * | 1992-07-31 | 1994-02-22 | Yoshida Kogyo Kk <Ykk> | 硬質多層膜形成体およびその製造方法 |
| GB2338716A (en) * | 1998-06-26 | 1999-12-29 | Mclaughlin James A | RF plasma enhanced CVD where the substrate acts as a cathode |
| JP2007320142A (ja) * | 2006-05-31 | 2007-12-13 | Meisho Kiko Kk | ナノインプリント用モールド |
| JP2022023933A (ja) * | 2017-06-08 | 2022-02-08 | アプライド マテリアルズ インコーポレイテッド | ハードマスク及びその他のパターニング応用のための高密度低温炭素膜 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145375A (ja) * | 1984-01-09 | 1985-07-31 | Nippon Telegr & Teleph Corp <Ntt> | Νｂ膜表面の不動態化処理方法 |
-
1985
- 1985-08-14 JP JP60179025A patent/JPS6240375A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145375A (ja) * | 1984-01-09 | 1985-07-31 | Nippon Telegr & Teleph Corp <Ntt> | Νｂ膜表面の不動態化処理方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275850A (en) * | 1988-04-20 | 1994-01-04 | Hitachi, Ltd. | Process for producing a magnetic disk having a metal containing hard carbon coating by plasma chemical vapor deposition under a negative self bias |
| JPH0649645A (ja) * | 1992-07-31 | 1994-02-22 | Yoshida Kogyo Kk <Ykk> | 硬質多層膜形成体およびその製造方法 |
| GB2338716A (en) * | 1998-06-26 | 1999-12-29 | Mclaughlin James A | RF plasma enhanced CVD where the substrate acts as a cathode |
| GB2338716B (en) * | 1998-06-26 | 2003-04-02 | Mclaughlin James A | An apparatus and a method for coating diamond like carbon (DLC) or other vacuum depositable coatings onto a substrate |
| JP2007320142A (ja) * | 2006-05-31 | 2007-12-13 | Meisho Kiko Kk | ナノインプリント用モールド |
| JP2022023933A (ja) * | 2017-06-08 | 2022-02-08 | アプライド マテリアルズ インコーポレイテッド | ハードマスク及びその他のパターニング応用のための高密度低温炭素膜 |
| JP2023134494A (ja) * | 2017-06-08 | 2023-09-27 | アプライド マテリアルズ インコーポレイテッド | ハードマスク及びその他のパターニング応用のための高密度低温炭素膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510426B2 (enExample) | 1993-02-09 |
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