JPS6240320B2 - - Google Patents
Info
- Publication number
- JPS6240320B2 JPS6240320B2 JP55166645A JP16664580A JPS6240320B2 JP S6240320 B2 JPS6240320 B2 JP S6240320B2 JP 55166645 A JP55166645 A JP 55166645A JP 16664580 A JP16664580 A JP 16664580A JP S6240320 B2 JPS6240320 B2 JP S6240320B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- temperature
- polycrystal
- heating
- crystal grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 249
- 238000010438 heat treatment Methods 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 239000012752 auxiliary agent Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- 229910001289 Manganese-zinc ferrite Inorganic materials 0.000 description 13
- JIYIUPFAJUGHNL-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[Mn++].[Mn++].[Mn++].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Zn++].[Zn++] Chemical compound [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[Mn++].[Mn++].[Mn++].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Zn++].[Zn++] JIYIUPFAJUGHNL-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 229910000859 α-Fe Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910052596 spinel Inorganic materials 0.000 description 12
- 239000011029 spinel Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 239000002223 garnet Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 230000001747 exhibiting effect Effects 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 7
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910001053 Nickel-zinc ferrite Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 235000006748 manganese carbonate Nutrition 0.000 description 4
- 239000011656 manganese carbonate Substances 0.000 description 4
- 229940093474 manganese carbonate Drugs 0.000 description 4
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 4
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000007952 growth promoter Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166645A JPS5792591A (en) | 1980-11-28 | 1980-11-28 | Production of single crystal |
| US06/322,757 US4444615A (en) | 1980-11-28 | 1981-11-19 | Method for producing a single crystal |
| DE8181305589T DE3176520D1 (en) | 1980-11-28 | 1981-11-26 | Method for producing a single crystal |
| EP81305589A EP0053481B1 (en) | 1980-11-28 | 1981-11-26 | Method for producing a single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166645A JPS5792591A (en) | 1980-11-28 | 1980-11-28 | Production of single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792591A JPS5792591A (en) | 1982-06-09 |
| JPS6240320B2 true JPS6240320B2 (US20090192370A1-20090730-C00001.png) | 1987-08-27 |
Family
ID=15835103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166645A Granted JPS5792591A (en) | 1980-11-28 | 1980-11-28 | Production of single crystal |
Country Status (4)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58172286A (ja) * | 1982-04-02 | 1983-10-11 | Matsushita Electric Ind Co Ltd | 酸化物単結晶体の製造法 |
| JPS60138708A (ja) * | 1983-12-27 | 1985-07-23 | Ngk Insulators Ltd | 磁気ヘッド用コアの製造法 |
| EP0211187A3 (en) * | 1985-06-28 | 1989-01-11 | Kabushiki Kaisha Toshiba | Process for producing single crystal of garnet ferrite |
| JPH03215391A (ja) * | 1989-06-26 | 1991-09-20 | Canon Inc | 結晶の成長方法 |
| KR0157323B1 (ko) * | 1991-12-31 | 1999-02-18 | 황선두 | 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 |
| US5427051A (en) * | 1993-05-21 | 1995-06-27 | General Electric Company | Solid state formation of sapphire using a localized energy source |
| US5540182A (en) * | 1993-09-24 | 1996-07-30 | General Electric Company | Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography |
| US5451553A (en) * | 1993-09-24 | 1995-09-19 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire |
| JP3216683B2 (ja) * | 1993-10-08 | 2001-10-09 | 宇部興産株式会社 | セラミックス複合材料 |
| US5487353A (en) * | 1994-02-14 | 1996-01-30 | General Electric Company | Conversion of doped polycrystalline material to single crystal |
| JP2001110635A (ja) * | 1999-10-04 | 2001-04-20 | Minebea Co Ltd | 磁気光学体及びその製造方法 |
| US20030177975A1 (en) * | 2000-09-18 | 2003-09-25 | Akio Ikesue | Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material |
| CN101061263B (zh) * | 2004-11-19 | 2011-03-23 | Tdk株式会社 | 磁性石榴石单晶及使用其的光学元件和单晶的制造方法 |
| US7695562B2 (en) * | 2006-01-10 | 2010-04-13 | Tdk Corporation | Magnetic garnet single crystal and method for producing the same as well as optical element using the same |
| JP4720730B2 (ja) * | 2006-01-27 | 2011-07-13 | Ｔｄｋ株式会社 | 光学素子の製造方法 |
| JP4702090B2 (ja) * | 2006-02-20 | 2011-06-15 | Ｔｄｋ株式会社 | 磁性ガーネット単結晶及びそれを用いた光学素子 |
| US7758766B2 (en) * | 2007-09-17 | 2010-07-20 | Tdk Corporation | Magnetic garnet single crystal and Faraday rotator using the same |
| FR2943340B1 (fr) * | 2009-03-18 | 2011-04-22 | Centre Nat Rech Scient | Procede de preparation d'une couche mince de thiospinelles |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611391A (ja) * | 1984-03-06 | 1986-01-07 | イ−ライ・リリ−・アンド・カンパニ− | 牛の成長ホルモン誘導体を発現するベクタ− |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE630303A (US20090192370A1-20090730-C00001.png) * | 1962-03-29 | 1900-01-01 | ||
| US3278273A (en) * | 1962-12-28 | 1966-10-11 | Robert J Fischer | Single crystal barium titanate |
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
| GB1393337A (en) * | 1972-12-29 | 1975-05-07 | Ibm | Method of growing a single crystal film |
| US4046618A (en) * | 1972-12-29 | 1977-09-06 | International Business Machines Corporation | Method for preparing large single crystal thin films |
| US3849205A (en) * | 1973-08-27 | 1974-11-19 | Texas Instruments Inc | Enhancement of solid state recrystallization by induced nucleation |
| DE2921214A1 (de) * | 1979-05-25 | 1980-12-04 | Bosch Gmbh Robert | Verfahren zur fahrgeschwindigkeitsregelung und fahrgeschwindigkeitsregler |
| US4402787A (en) * | 1979-05-31 | 1983-09-06 | Ngk Insulators, Ltd. | Method for producing a single crystal |
| JPS55162496A (en) * | 1979-05-31 | 1980-12-17 | Ngk Insulators Ltd | Manufacture of single crystal |
| JPS56155100A (en) * | 1980-05-02 | 1981-12-01 | Ngk Insulators Ltd | Production of single crystal of ferrite |
-
1980
- 1980-11-28 JP JP55166645A patent/JPS5792591A/ja active Granted
-
1981
- 1981-11-19 US US06/322,757 patent/US4444615A/en not_active Expired - Lifetime
- 1981-11-26 DE DE8181305589T patent/DE3176520D1/de not_active Expired
- 1981-11-26 EP EP81305589A patent/EP0053481B1/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611391A (ja) * | 1984-03-06 | 1986-01-07 | イ−ライ・リリ−・アンド・カンパニ− | 牛の成長ホルモン誘導体を発現するベクタ− |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5792591A (en) | 1982-06-09 |
| EP0053481A1 (en) | 1982-06-09 |
| EP0053481B1 (en) | 1987-11-11 |
| DE3176520D1 (en) | 1987-12-17 |
| US4444615A (en) | 1984-04-24 |
