JPS5792591A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5792591A
JPS5792591A JP55166645A JP16664580A JPS5792591A JP S5792591 A JPS5792591 A JP S5792591A JP 55166645 A JP55166645 A JP 55166645A JP 16664580 A JP16664580 A JP 16664580A JP S5792591 A JPS5792591 A JP S5792591A
Authority
JP
Japan
Prior art keywords
crystal
growth
polycrystal
single crystal
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55166645A
Other languages
English (en)
Other versions
JPS6240320B2 (ja
Inventor
Motoichiro Matsuzawa
Shunzo Mase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIHON GAISHI KK
NGK Insulators Ltd
Original Assignee
NIHON GAISHI KK
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIHON GAISHI KK, NGK Insulators Ltd filed Critical NIHON GAISHI KK
Priority to JP55166645A priority Critical patent/JPS5792591A/ja
Priority to US06/322,757 priority patent/US4444615A/en
Priority to DE8181305589T priority patent/DE3176520D1/de
Priority to EP81305589A priority patent/EP0053481B1/en
Publication of JPS5792591A publication Critical patent/JPS5792591A/ja
Publication of JPS6240320B2 publication Critical patent/JPS6240320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP55166645A 1980-11-28 1980-11-28 Production of single crystal Granted JPS5792591A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55166645A JPS5792591A (en) 1980-11-28 1980-11-28 Production of single crystal
US06/322,757 US4444615A (en) 1980-11-28 1981-11-19 Method for producing a single crystal
DE8181305589T DE3176520D1 (en) 1980-11-28 1981-11-26 Method for producing a single crystal
EP81305589A EP0053481B1 (en) 1980-11-28 1981-11-26 Method for producing a single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166645A JPS5792591A (en) 1980-11-28 1980-11-28 Production of single crystal

Publications (2)

Publication Number Publication Date
JPS5792591A true JPS5792591A (en) 1982-06-09
JPS6240320B2 JPS6240320B2 (ja) 1987-08-27

Family

ID=15835103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166645A Granted JPS5792591A (en) 1980-11-28 1980-11-28 Production of single crystal

Country Status (4)

Country Link
US (1) US4444615A (ja)
EP (1) EP0053481B1 (ja)
JP (1) JPS5792591A (ja)
DE (1) DE3176520D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58172286A (ja) * 1982-04-02 1983-10-11 Matsushita Electric Ind Co Ltd 酸化物単結晶体の製造法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138708A (ja) * 1983-12-27 1985-07-23 Ngk Insulators Ltd 磁気ヘッド用コアの製造法
EP0211187A3 (en) * 1985-06-28 1989-01-11 Kabushiki Kaisha Toshiba Process for producing single crystal of garnet ferrite
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
KR0157323B1 (ko) * 1991-12-31 1999-02-18 황선두 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
US5427051A (en) * 1993-05-21 1995-06-27 General Electric Company Solid state formation of sapphire using a localized energy source
US5540182A (en) * 1993-09-24 1996-07-30 General Electric Company Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography
US5451553A (en) * 1993-09-24 1995-09-19 General Electric Company Solid state thermal conversion of polycrystalline alumina to sapphire
JP3216683B2 (ja) * 1993-10-08 2001-10-09 宇部興産株式会社 セラミックス複合材料
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
JP2001110635A (ja) * 1999-10-04 2001-04-20 Minebea Co Ltd 磁気光学体及びその製造方法
US20030177975A1 (en) * 2000-09-18 2003-09-25 Akio Ikesue Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material
CN101061263B (zh) * 2004-11-19 2011-03-23 Tdk株式会社 磁性石榴石单晶及使用其的光学元件和单晶的制造方法
US7695562B2 (en) * 2006-01-10 2010-04-13 Tdk Corporation Magnetic garnet single crystal and method for producing the same as well as optical element using the same
JP4720730B2 (ja) * 2006-01-27 2011-07-13 Ｔｄｋ株式会社 光学素子の製造方法
JP4702090B2 (ja) * 2006-02-20 2011-06-15 Ｔｄｋ株式会社 磁性ガーネット単結晶及びそれを用いた光学素子
US7758766B2 (en) * 2007-09-17 2010-07-20 Tdk Corporation Magnetic garnet single crystal and Faraday rotator using the same
FR2943340B1 (fr) * 2009-03-18 2011-04-22 Centre Nat Rech Scient Procede de preparation d'une couche mince de thiospinelles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611391A (ja) * 1984-03-06 1986-01-07 イ−ライ・リリ−・アンド・カンパニ− 牛の成長ホルモン誘導体を発現するベクタ−

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE630303A (ja) * 1962-03-29 1900-01-01
US3278273A (en) * 1962-12-28 1966-10-11 Robert J Fischer Single crystal barium titanate
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
GB1393337A (en) * 1972-12-29 1975-05-07 Ibm Method of growing a single crystal film
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
DE2921214A1 (de) * 1979-05-25 1980-12-04 Bosch Gmbh Robert Verfahren zur fahrgeschwindigkeitsregelung und fahrgeschwindigkeitsregler
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
JPS55162496A (en) * 1979-05-31 1980-12-17 Ngk Insulators Ltd Manufacture of single crystal
JPS56155100A (en) * 1980-05-02 1981-12-01 Ngk Insulators Ltd Production of single crystal of ferrite

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611391A (ja) * 1984-03-06 1986-01-07 イ−ライ・リリ−・アンド・カンパニ− 牛の成長ホルモン誘導体を発現するベクタ−

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58172286A (ja) * 1982-04-02 1983-10-11 Matsushita Electric Ind Co Ltd 酸化物単結晶体の製造法
JPS6215516B2 (ja) * 1982-04-02 1987-04-08 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
EP0053481A1 (en) 1982-06-09
JPS6240320B2 (ja) 1987-08-27
EP0053481B1 (en) 1987-11-11
DE3176520D1 (en) 1987-12-17
US4444615A (en) 1984-04-24

Similar Documents

Publication Publication Date Title
JPS5792591A (en) Production of single crystal
EP0390672A3 (en) Method for heat process of silicon
JPS56155100A (en) Production of single crystal of ferrite
DE1667604B1 (de) Verfahren zur herstellung von kristallinem cadmiumtellurid
JPS5562887A (en) Production of hexagonal system barium magnesium aluminate (bamga 10o17) single crystal
JPS5792599A (en) Production of single crystal of ferrite
JPS5490086A (en) Method of producing single crystal
JPS5722199A (en) Method for growing single crystal
JPS52138095A (en) Growth of sapphire single crystal
GB967933A (en) Improvements in or relating to methods of preparing crystalline silicon carbide
JPS57191299A (en) Preparation of single crystal of corundum shedding asterism
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS57156399A (en) Preparation of boron nitride of cubic system
JPS6437486A (en) Crucible for crystal growth
JPS57149721A (en) Method of vapor epitaxial growth
JPS56109897A (en) Growing method for single crystal having pseudoperovskite structure
JPS57196791A (en) Production of single crystal
JPS51136582A (en) Process for production of a semi -conductor crystal
CISZEK Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals[Patent Application]
JPS5532708A (en) Production of pbo single crystal
JPS5492597A (en) Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method
JPS54109080A (en) Crystal-growing method by limited-edge-crystal growing method
JPS5614500A (en) Manufacture of synthetic corundum single crystal having asterism
JPS54133481A (en) Preparation of y3fe5o12 single crystal by solution pulling method