JPS57196791A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS57196791A JPS57196791A JP7812781A JP7812781A JPS57196791A JP S57196791 A JPS57196791 A JP S57196791A JP 7812781 A JP7812781 A JP 7812781A JP 7812781 A JP7812781 A JP 7812781A JP S57196791 A JPS57196791 A JP S57196791A
- Authority
- JP
- Japan
- Prior art keywords
- diameter
- single crystal
- crystal
- constant
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To avert large temp. fluctuations near the parts where shoulders are formed and to grow a single crystal of good quality in the stage of growing the single crystal by forming the shoulder part connecting the part where the crystal diameter increases and the part where it is constant to a smooth curve.
CONSTITUTION: In growing a single crystal of lithium niobate, Li2CO3 and Nb2O5 which are raw materials are mixed at a specific ratio and the mixture is calcined and is charged into a platnium crucible. The crucible is set at 150° angle of the part 1 where the diameter is increased, and is formed with a shoulder part 3 by curved lines in such a way that crystal diameters change along the parabolas from the top attaining a target diameter and arrive smoothly at a constant target diameter part 3, whereby the length of the curved part is set at ≥1/10 the diameter of the part 2 of a constant diameter. In this way, the single crystal of lithium niobate is grown by a Czochralski method having the preprogrammed automatic diameter control. This yields the single crystal of good quality having no cracks. This method is also applicable to the growth of single crystals of ferrite, Gd, Ga, garnet.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7812781A JPS57196791A (en) | 1981-05-25 | 1981-05-25 | Production of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7812781A JPS57196791A (en) | 1981-05-25 | 1981-05-25 | Production of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57196791A true JPS57196791A (en) | 1982-12-02 |
Family
ID=13653212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7812781A Pending JPS57196791A (en) | 1981-05-25 | 1981-05-25 | Production of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196791A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017109878A (en) * | 2015-12-14 | 2017-06-22 | 住友金属鉱山株式会社 | Raising method of nonmagnetic garnet single crystal |
-
1981
- 1981-05-25 JP JP7812781A patent/JPS57196791A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017109878A (en) * | 2015-12-14 | 2017-06-22 | 住友金属鉱山株式会社 | Raising method of nonmagnetic garnet single crystal |
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