JPS6465098A - Single crystal of terbium-scandium-gallium-garnet - Google Patents

Single crystal of terbium-scandium-gallium-garnet

Info

Publication number
JPS6465098A
JPS6465098A JP22121687A JP22121687A JPS6465098A JP S6465098 A JPS6465098 A JP S6465098A JP 22121687 A JP22121687 A JP 22121687A JP 22121687 A JP22121687 A JP 22121687A JP S6465098 A JPS6465098 A JP S6465098A
Authority
JP
Japan
Prior art keywords
single crystal
compsn
melt
starting materials
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22121687A
Other languages
Japanese (ja)
Other versions
JPH0524115B2 (en
Inventor
Hiroyuki Oba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP22121687A priority Critical patent/JPS6465098A/en
Publication of JPS6465098A publication Critical patent/JPS6465098A/en
Publication of JPH0524115B2 publication Critical patent/JPH0524115B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable production of a substrate crystal for growing a magnetic garnet single crystal with high efficiency by restricting the compsn. of melt of starting materials to a predetermined range when said single crystal is grown by the Czochralski method. CONSTITUTION:The compsn. of melt of starting materials is restricted to a compsn. expressed by the chemical formula: TbxScyGa8-x-yO12 wherein x, y and z are defined by 2.90<=x<=2.94, 1.76<=y<=1.78. For example, each oxide powder of Tb2O3, Sc2O3 and Ga2O3 for a melt of starting materials is weighed corresponding to a compsn. expressed by Tb2.90Sc1.76Ga3.34O12, and mixed, and the mixture is melted in an Ir crucible. By using a rod of a Tb.Sc.Ga-garnet single crystal cut in <111> bearings from said melt as a seed crystal, a single crystal is grown in N2 atmosphere at 3mm/hr pulling speed and 20rpm rotation speed of a pulling shaft. By this method, a uniform single crystal is produced with high efficiency with a small difference of lattice constant from immediately after growth to just before the completion of the growth.
JP22121687A 1987-09-05 1987-09-05 Single crystal of terbium-scandium-gallium-garnet Granted JPS6465098A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22121687A JPS6465098A (en) 1987-09-05 1987-09-05 Single crystal of terbium-scandium-gallium-garnet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22121687A JPS6465098A (en) 1987-09-05 1987-09-05 Single crystal of terbium-scandium-gallium-garnet

Publications (2)

Publication Number Publication Date
JPS6465098A true JPS6465098A (en) 1989-03-10
JPH0524115B2 JPH0524115B2 (en) 1993-04-06

Family

ID=16763285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22121687A Granted JPS6465098A (en) 1987-09-05 1987-09-05 Single crystal of terbium-scandium-gallium-garnet

Country Status (1)

Country Link
JP (1) JPS6465098A (en)

Also Published As

Publication number Publication date
JPH0524115B2 (en) 1993-04-06

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees