JP3095504B2 - Method for producing compound sintered body - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a (rare earth gallate)
The present invention relates to a method for producing a compound sintered body,
The present invention relates to a method for producing a PrGaO ₃ compound sintered body, which is a base material, used when producing an rGaO ₃ single crystal or producing a PrGaO ₃ target for forming a PrGaO ₃ thin film.

[0002]

2. Description of the Related Art A high-frequency heating type pulling method for growing a single crystal from a melt has been used as a method for manufacturing an oxide single crystal which is widely used at present. A sintered body made of the same compound as the oxide single crystal to be used is used. Also, when manufacturing a target when a sputtering method, a laser deposition method, or the like is used for forming an oxide thin film, a sintered body mainly containing the same compound as the oxide thin film to be manufactured is used.

Conventionally, as a method for producing a compound sintered body which is a base material used for producing these oxide single crystals or a target for forming an oxide thin film, Geller et al.
at. Res. Bull. 9 (1974) 637) and Mizuno et al. (Journal of the Ceramic Society of Japan 93 (1985) 26), a case where a rare earth gallate LnGaO ₃ (Ln is a rare earth, the same applies hereinafter) compound is taken as an example. , Ln ₂ O ₃ and Ga ₂ O ₃ are weighed equimolarly as starting materials, mixed with a grinder and compression-molded with a press. This compression molded product is sintered at 1100 ° C. or higher in the atmosphere. Next, this sintered product is mixed again by a grinder and compression-molded again by a press. Thereafter, the recompressed product is resintered in air at a temperature of 1400 ° C. or higher, which is higher than the initial sintering temperature. As described above, conventionally, two hybridizing, forming, and sintering steps are performed to obtain a desired rare earth gallate Ln.
A method of producing GaO ₃ has been adopted.

[0004] In this conventional production process, two hybridizing, forming and sintering steps are required, so that the steps are complicated and time-consuming. In addition, an expensive ultrahigh temperature furnace manufactured by Kanthal Super must be used for sintering at a high temperature in the resintering process.
There was a drawback that the cost for producing a mother material composed of _three compounds was high.

[0005]

An object of the present invention is to provide a high-quality PrGaO ₃ compound sintered body that can be used as a base material for single crystal production and target production.
An object of the present invention is to realize a simple and inexpensive manufacturing method using praseodymium oxide and gallium oxide as raw materials.

[0006]

The compound sintered body of the present invention is
The manufacturing method is Ln₆O₁₁(Ln is a rare earth) and Ga_TwoO _Three
Is mixed at a molar ratio of 1: 3 and then sintered.
I do. Ln₆O₁₁As Pr₆O₁₁It is preferable to use
Suitable for sintering at temperatures below 1200 ° C in air.
Is preferred.

[0007]

FIG. 1 is a diagram showing one embodiment of the present invention. Pr ₆ O ₁₁ and Ga ₂ O ₃ are used as starting materials. These were mixed in a molar ratio of Pr ₆ O ₁₁ : Ga ₂ O ₃ = 1: 3.
Weigh equimolar so that Next, the equimolarly weighed starting materials are mixed for 4 hours with a grinder. Thereafter, sintering is performed in the atmosphere at a temperature of 1200 ° C. or less, for example, 1150 ° C. for 15 hours.

FIG. 2 shows an X-ray diffraction pattern of the PrGaO ₃ compound sintered body thus manufactured. This X-ray diffraction pattern does not include an unidentifiable peak at 2θ = 31.76 ° as in a comparative example described later, and the obtained Pr
It can be seen that the GaO ₃ compound sintered body is of extremely high quality.

The PrGaO produced by the present invention_ThreeCompound sintering
The extremely high quality of the body is based on the following results:
confirmed. That is, PrGaO manufactured by the method of the embodiment
_ThreePlatinum or iridium made from compound sintered body as base material
Melted in a crucible made of PrGaO_Three
When a single crystal was grown, it was produced in the comparative example described below.
Compared with a single crystal grown from a sintered body as a base material,
The grown single crystal using the manufactured sintered body has no cracks.
It was a good single crystal. Furthermore, it is manufactured by the method of the embodiment.
PrGaO_ThreeThe compound sintered body is used as a sputtering target.
LnGaO_ThreeSubstrate, SrTiO_ThreeSubstrate, Mg
PrGaO on O substrate by sputtering _ThreeForming a thin film
Then, the sintered body produced in the comparative example
Compared to a thin film formed as a target for
The thin film using the produced sintered body as the target is homogeneous and crystalline
It was a good thin film.

[0010]

Comparative Example For comparison, Pr ₂ O ₃ was used as a starting material.
And by using the Ga ₂ O _3, the X-ray diffraction pattern in the case of producing a sintered body in the same manner as in Example 3. Pr
And ₂ O ₃ and Ga ₂ O ₃ and an equimolar weighed, after mixture of 4 hours by puppet machine, sintered bodies were produced by performing the sintering for 15 hours at 1150 ° C in the atmosphere, in FIG. 3 As shown, P
Although there is a peak suggesting the formation of an rGaO ₃ compound, it has an unidentifiable peak at 2θ = 31.76 °. This indicates that when Pr ₂ O ₃ and Ga ₂ O ₃ were used as starting materials, the formation of the PrGaO ₃ compound was not completely performed. Furthermore, although the sintering temperature was changed just in case, at a sintering temperature of 1200 ° C., the above-mentioned unidentifiable peaks existed in the sintered body, and a high quality PrGaO ₃ compound was obtained. A sintered body could not be obtained.

[0011]

As described in the above embodiment, in the present invention, the hybrid and sintering steps can be performed only once, so that a PrGaO ₃ compound sintered body can be easily manufactured. In addition, since Ln ₆ O ₁₁ and Ga ₂ O ₃ are used as starting materials, a high-quality PrGaO ₃ compound sintered body can be manufactured, and the temperature in the sintered body process can be suppressed to a low level. The furnace can be used, and the PrGaO ₃ compound sintered body can be manufactured at low cost.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of the present invention.

FIG. 2 is a view showing an X-ray diffraction pattern of a PrGaO ₃ compound sintered body manufactured by the present invention.

FIG. 3 is a view showing an X-ray diffraction pattern of a compound sintered body manufactured in a comparative example.

[Explanation of symbols]

 1 Starting material selection process 2 Equimolar weighing process 3 Hybridization process 4 Sintering process

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) C04B 35/42-35/50 CA (STN) REGISTRY (STN) WPI (DIALOG)

Claims (3)

(57) [Claims] 1. Ln ₆ O ₁₁ (Ln is a rare earth) and Ga ₂ O
_{3. A} method for producing a compound sintered body, comprising: mixing 3 with a molar ratio of 1: 3, followed by sintering. 2. The method for producing a compound sintered body according to claim 1, wherein Ln ₆ O ₁₁ is Pr ₆ O _11. 3. The method for producing a compound sintered body according to claim 1, wherein the sintering is performed at a temperature of 1200 ° C. or lower in the atmosphere.