JPS55154393A - Preparation of monocrystal - Google Patents

Preparation of monocrystal

Info

Publication number
JPS55154393A
JPS55154393A JP5788579A JP5788579A JPS55154393A JP S55154393 A JPS55154393 A JP S55154393A JP 5788579 A JP5788579 A JP 5788579A JP 5788579 A JP5788579 A JP 5788579A JP S55154393 A JPS55154393 A JP S55154393A
Authority
JP
Japan
Prior art keywords
crucible
leading end
seed crystal
small tube
monocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5788579A
Other languages
Japanese (ja)
Inventor
Tsutomu Iimura
Moichi Otomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Proterial Ltd
Original Assignee
Hitachi Ltd
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Metals Ltd filed Critical Hitachi Ltd
Priority to JP5788579A priority Critical patent/JPS55154393A/en
Publication of JPS55154393A publication Critical patent/JPS55154393A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the growth of a hetero-crystal nucleus and attain the enhancement of monocrystal growing ratio by a method wherein, in case of introducing a seed crystal in a small tube of a leading end of a crucible and growing a monocrystal by a Bridgman method, a leading end of a crucible and a small tube are covered by a heat resistant warmth preserving material to reduce the temp. difference between a crucible center and the vicinity of a crucible wall.
CONSTITUTION: A crucible consisted of a cyrindrical main body 1, a leading end 2 of which an opening angle α is above 50° or more and a small tube 3 for introducing a seed crystal is used, and a seed crystal 4 is introduced into a small tube 3 and a stock material 5 is filled in a main body 1 and a leading end 2. In this case, a leading end 2 of a crucible and a small tube 3 are covered by a warmth preserving material 6 made from Al2O3 or the like. Thereafter, all of a stock material and a part of a seed crystal 4 are melted and the temp. of a crucible is gradually lowered to grow a monocrystal from a seed crystal to a direction of a leading end and a main body.
COPYRIGHT: (C)1980,JPO&Japio
JP5788579A 1979-05-11 1979-05-11 Preparation of monocrystal Pending JPS55154393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5788579A JPS55154393A (en) 1979-05-11 1979-05-11 Preparation of monocrystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5788579A JPS55154393A (en) 1979-05-11 1979-05-11 Preparation of monocrystal

Publications (1)

Publication Number Publication Date
JPS55154393A true JPS55154393A (en) 1980-12-01

Family

ID=13068437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5788579A Pending JPS55154393A (en) 1979-05-11 1979-05-11 Preparation of monocrystal

Country Status (1)

Country Link
JP (1) JPS55154393A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226885A (en) * 1986-03-28 1987-10-05 Yokogawa Electric Corp Device for growing cdte crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226885A (en) * 1986-03-28 1987-10-05 Yokogawa Electric Corp Device for growing cdte crystal

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