JPS6237905B2 - - Google Patents
Info
- Publication number
- JPS6237905B2 JPS6237905B2 JP6815981A JP6815981A JPS6237905B2 JP S6237905 B2 JPS6237905 B2 JP S6237905B2 JP 6815981 A JP6815981 A JP 6815981A JP 6815981 A JP6815981 A JP 6815981A JP S6237905 B2 JPS6237905 B2 JP S6237905B2
- Authority
- JP
- Japan
- Prior art keywords
- optical integrated
- mesa stripe
- integrated circuit
- substrate
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000005253 cladding Methods 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6815981A JPS57183091A (en) | 1981-05-08 | 1981-05-08 | Manufacture of optical integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6815981A JPS57183091A (en) | 1981-05-08 | 1981-05-08 | Manufacture of optical integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57183091A JPS57183091A (en) | 1982-11-11 |
| JPS6237905B2 true JPS6237905B2 (enrdf_load_stackoverflow) | 1987-08-14 |
Family
ID=13365692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6815981A Granted JPS57183091A (en) | 1981-05-08 | 1981-05-08 | Manufacture of optical integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183091A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114476A (ja) * | 1981-12-28 | 1983-07-07 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
| JPS59210682A (ja) * | 1983-05-16 | 1984-11-29 | Oki Electric Ind Co Ltd | 半導体レ−ザの製造方法 |
| JPS61100990A (ja) * | 1984-10-22 | 1986-05-19 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| US4999316A (en) * | 1988-03-23 | 1991-03-12 | Massachusetts Institute Of Technology | Method for forming tapered laser or waveguide optoelectronic structures |
| US5585957A (en) * | 1993-03-25 | 1996-12-17 | Nippon Telegraph And Telephone Corporation | Method for producing various semiconductor optical devices of differing optical characteristics |
| US6034380A (en) * | 1997-10-07 | 2000-03-07 | Sarnoff Corporation | Electroluminescent diode with mode expander |
-
1981
- 1981-05-08 JP JP6815981A patent/JPS57183091A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57183091A (en) | 1982-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5805755A (en) | Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration | |
| US8363314B2 (en) | Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) | |
| US5543353A (en) | Method of manufacturing a semiconductor photonic integrated circuit | |
| US4114257A (en) | Method of fabrication of a monolithic integrated optical circuit | |
| US6107112A (en) | Distributed feedback semiconductor laser and method for producing the same | |
| JP3751052B2 (ja) | 集積型光制御素子およびその作製方法、並びにそれを備えた光集積回路素子および光集積回路装置 | |
| JPH03241885A (ja) | 干渉計半導体レーザ | |
| US4796274A (en) | Semiconductor device with distributed bragg reflector | |
| JPH1114842A (ja) | 導波路型光集積回路素子及びその製造方法 | |
| JP3141811B2 (ja) | 半導体レーザ装置、その製造方法 | |
| KR100582114B1 (ko) | 반도체 디바이스 제작 방법 및 반도체 광 디바이스 | |
| JP3043796B2 (ja) | 集積型光カップラ | |
| JPS6237905B2 (enrdf_load_stackoverflow) | ||
| JP2907234B2 (ja) | 半導体波長可変装置 | |
| JP2965011B2 (ja) | 半導体光素子及びその製造方法 | |
| JPS6328520B2 (enrdf_load_stackoverflow) | ||
| JPH0529602A (ja) | 半導体光集積素子及びその製造方法 | |
| JP3116912B2 (ja) | 半導体光集積素子及びそれを用いた光通信用モジュール並びに光通信システムとその製造方法 | |
| JP3104800B2 (ja) | 集積型光カップラの製造方法 | |
| JP3311238B2 (ja) | 光半導体装置、及びその製造方法 | |
| JP2836051B2 (ja) | 光波長フィルター | |
| KR100368323B1 (ko) | 이득 결합형 단일모드 반도체 레이저의 제조 방법 | |
| JPS60126881A (ja) | 半導体レ−ザ装置 | |
| JP3104801B2 (ja) | 集積型光カップラ | |
| JP2001053380A (ja) | 半導体レーザモジュールおよびその製造方法 |