JPS57183091A - Manufacture of optical integrated circuit - Google Patents

Manufacture of optical integrated circuit

Info

Publication number
JPS57183091A
JPS57183091A JP6815981A JP6815981A JPS57183091A JP S57183091 A JPS57183091 A JP S57183091A JP 6815981 A JP6815981 A JP 6815981A JP 6815981 A JP6815981 A JP 6815981A JP S57183091 A JPS57183091 A JP S57183091A
Authority
JP
Japan
Prior art keywords
mesastripe
substrate
integrated circuit
optical integrated
waveguide path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6815981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237905B2 (enrdf_load_stackoverflow
Inventor
Hideto Furuyama
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6815981A priority Critical patent/JPS57183091A/ja
Publication of JPS57183091A publication Critical patent/JPS57183091A/ja
Publication of JPS6237905B2 publication Critical patent/JPS6237905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6815981A 1981-05-08 1981-05-08 Manufacture of optical integrated circuit Granted JPS57183091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6815981A JPS57183091A (en) 1981-05-08 1981-05-08 Manufacture of optical integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6815981A JPS57183091A (en) 1981-05-08 1981-05-08 Manufacture of optical integrated circuit

Publications (2)

Publication Number Publication Date
JPS57183091A true JPS57183091A (en) 1982-11-11
JPS6237905B2 JPS6237905B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=13365692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6815981A Granted JPS57183091A (en) 1981-05-08 1981-05-08 Manufacture of optical integrated circuit

Country Status (1)

Country Link
JP (1) JPS57183091A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114476A (ja) * 1981-12-28 1983-07-07 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS59210682A (ja) * 1983-05-16 1984-11-29 Oki Electric Ind Co Ltd 半導体レ−ザの製造方法
JPS61100990A (ja) * 1984-10-22 1986-05-19 Mitsubishi Electric Corp 半導体レ−ザ装置
US4999316A (en) * 1988-03-23 1991-03-12 Massachusetts Institute Of Technology Method for forming tapered laser or waveguide optoelectronic structures
EP0617471A3 (en) * 1993-03-25 1998-06-17 Nippon Telegraph And Telephone Corporation Optical functional devices, integrated optical devices, and methods for producing such devices
EP0908959A3 (en) * 1997-10-07 2000-05-24 Sarnoff Corporation Semiconductor diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114476A (ja) * 1981-12-28 1983-07-07 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS59210682A (ja) * 1983-05-16 1984-11-29 Oki Electric Ind Co Ltd 半導体レ−ザの製造方法
JPS61100990A (ja) * 1984-10-22 1986-05-19 Mitsubishi Electric Corp 半導体レ−ザ装置
US4999316A (en) * 1988-03-23 1991-03-12 Massachusetts Institute Of Technology Method for forming tapered laser or waveguide optoelectronic structures
EP0617471A3 (en) * 1993-03-25 1998-06-17 Nippon Telegraph And Telephone Corporation Optical functional devices, integrated optical devices, and methods for producing such devices
EP0908959A3 (en) * 1997-10-07 2000-05-24 Sarnoff Corporation Semiconductor diode

Also Published As

Publication number Publication date
JPS6237905B2 (enrdf_load_stackoverflow) 1987-08-14

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