JPS6328520B2 - - Google Patents

Info

Publication number
JPS6328520B2
JPS6328520B2 JP56209607A JP20960781A JPS6328520B2 JP S6328520 B2 JPS6328520 B2 JP S6328520B2 JP 56209607 A JP56209607 A JP 56209607A JP 20960781 A JP20960781 A JP 20960781A JP S6328520 B2 JPS6328520 B2 JP S6328520B2
Authority
JP
Japan
Prior art keywords
region
layer
semiconductor layer
active layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56209607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58114476A (ja
Inventor
Katsuyuki Uko
Kazuo Sakai
Shigeyuki Akiba
Juichi Matsushima
Yukitoshi Kushiro
Yukio Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP56209607A priority Critical patent/JPS58114476A/ja
Publication of JPS58114476A publication Critical patent/JPS58114476A/ja
Publication of JPS6328520B2 publication Critical patent/JPS6328520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56209607A 1981-12-28 1981-12-28 半導体レ−ザ Granted JPS58114476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209607A JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209607A JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58114476A JPS58114476A (ja) 1983-07-07
JPS6328520B2 true JPS6328520B2 (enrdf_load_stackoverflow) 1988-06-08

Family

ID=16575603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209607A Granted JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58114476A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826812A (zh) * 2015-01-27 2016-08-03 华为技术有限公司 可调激光器和调谐激光器的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684823B1 (fr) * 1991-12-04 1994-01-21 Alcatel Alsthom Cie Gle Electric Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
CN1214499C (zh) * 1994-02-24 2005-08-10 英国电讯有限公司 半导体器件
US5844929A (en) * 1994-02-24 1998-12-01 British Telecommunications Public Limited Company Optical device with composite passive and tapered active waveguide regions
US5574742A (en) * 1994-05-31 1996-11-12 Lucent Technologies Inc. Tapered beam expander waveguide integrated with a diode laser
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
KR100958338B1 (ko) * 2007-12-18 2010-05-17 한국전자통신연구원 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저
JP7279658B2 (ja) * 2020-02-12 2023-05-23 住友電気工業株式会社 半導体光素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183091A (en) * 1981-05-08 1982-11-11 Toshiba Corp Manufacture of optical integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826812A (zh) * 2015-01-27 2016-08-03 华为技术有限公司 可调激光器和调谐激光器的方法
CN105826812B (zh) * 2015-01-27 2020-04-21 华为技术有限公司 可调激光器和调谐激光器的方法

Also Published As

Publication number Publication date
JPS58114476A (ja) 1983-07-07

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