JPS6237835B2 - - Google Patents
Info
- Publication number
- JPS6237835B2 JPS6237835B2 JP16593879A JP16593879A JPS6237835B2 JP S6237835 B2 JPS6237835 B2 JP S6237835B2 JP 16593879 A JP16593879 A JP 16593879A JP 16593879 A JP16593879 A JP 16593879A JP S6237835 B2 JPS6237835 B2 JP S6237835B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- type
- growth
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 239000007791 liquid phase Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16593879A JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16593879A JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688390A JPS5688390A (en) | 1981-07-17 |
JPS6237835B2 true JPS6237835B2 (enrdf_load_html_response) | 1987-08-14 |
Family
ID=15821861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16593879A Granted JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688390A (enrdf_load_html_response) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58131784A (ja) * | 1982-01-29 | 1983-08-05 | Nec Corp | 埋め込みヘテロ構造半導体レ−ザ |
JPS5882589A (ja) * | 1981-11-12 | 1983-05-18 | Nec Corp | 半導体レ−ザ |
JPS60115284A (ja) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ及びその製法 |
-
1979
- 1979-12-20 JP JP16593879A patent/JPS5688390A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5688390A (en) | 1981-07-17 |