JPS6237835B2 - - Google Patents
Info
- Publication number
- JPS6237835B2 JPS6237835B2 JP16593879A JP16593879A JPS6237835B2 JP S6237835 B2 JPS6237835 B2 JP S6237835B2 JP 16593879 A JP16593879 A JP 16593879A JP 16593879 A JP16593879 A JP 16593879A JP S6237835 B2 JPS6237835 B2 JP S6237835B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- type
- growth
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593879A JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593879A JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688390A JPS5688390A (en) | 1981-07-17 |
| JPS6237835B2 true JPS6237835B2 (cg-RX-API-DMAC7.html) | 1987-08-14 |
Family
ID=15821861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16593879A Granted JPS5688390A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688390A (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58131784A (ja) * | 1982-01-29 | 1983-08-05 | Nec Corp | 埋め込みヘテロ構造半導体レ−ザ |
| JPS5882589A (ja) * | 1981-11-12 | 1983-05-18 | Nec Corp | 半導体レ−ザ |
| JPS60115284A (ja) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ及びその製法 |
-
1979
- 1979-12-20 JP JP16593879A patent/JPS5688390A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5688390A (en) | 1981-07-17 |