JPS6233737B2 - - Google Patents

Info

Publication number
JPS6233737B2
JPS6233737B2 JP58021731A JP2173183A JPS6233737B2 JP S6233737 B2 JPS6233737 B2 JP S6233737B2 JP 58021731 A JP58021731 A JP 58021731A JP 2173183 A JP2173183 A JP 2173183A JP S6233737 B2 JPS6233737 B2 JP S6233737B2
Authority
JP
Japan
Prior art keywords
film
pattern
silicone resin
graft
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58021731A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59148335A (ja
Inventor
Masao Morita
Saburo Imamura
Toshiaki Tamamura
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58021731A priority Critical patent/JPS59148335A/ja
Priority to EP83103348A priority patent/EP0091651B1/en
Priority to DE8383103348T priority patent/DE3377597D1/de
Priority to US06/482,613 priority patent/US4426247A/en
Publication of JPS59148335A publication Critical patent/JPS59148335A/ja
Publication of JPS6233737B2 publication Critical patent/JPS6233737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58021731A 1982-04-12 1983-02-14 微細パタ−ン形成法 Granted JPS59148335A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58021731A JPS59148335A (ja) 1983-02-14 1983-02-14 微細パタ−ン形成法
EP83103348A EP0091651B1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
DE8383103348T DE3377597D1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
US06/482,613 US4426247A (en) 1982-04-12 1983-04-06 Method for forming micropattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58021731A JPS59148335A (ja) 1983-02-14 1983-02-14 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS59148335A JPS59148335A (ja) 1984-08-25
JPS6233737B2 true JPS6233737B2 (en, 2012) 1987-07-22

Family

ID=12063218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58021731A Granted JPS59148335A (ja) 1982-04-12 1983-02-14 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS59148335A (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138254A (ja) * 1984-12-10 1986-06-25 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS6194042A (ja) * 1984-10-16 1986-05-12 Matsushita Electric Ind Co Ltd 分子構築体およびその製造方法
JP2641452B2 (ja) * 1987-07-27 1997-08-13 株式会社日立製作所 パターン形成方法
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
DE3937308C1 (en, 2012) * 1989-11-09 1991-03-21 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De

Also Published As

Publication number Publication date
JPS59148335A (ja) 1984-08-25

Similar Documents

Publication Publication Date Title
EP0091651B1 (en) Method for forming micropattern
US4738916A (en) Intermediate layer material of three-layer resist system
JPS6360891B2 (en, 2012)
US5384220A (en) Production of photolithographic structures
JP3506248B2 (ja) 微小構造の製造方法
EP0161256B1 (en) Graft polymerized sio 2? lithographic masks
US4596761A (en) Graft polymerized SiO2 lithographic masks
JP7389910B2 (ja) 基板をナノ構造化するための方法
JPH02191957A (ja) レジスト組成物
JPS6233737B2 (en, 2012)
JPH0128368B2 (en, 2012)
JPS6219051B2 (en, 2012)
JPS6226174B2 (en, 2012)
JPS59125730A (ja) ポジ型レジスト組成物
JPS5813900B2 (ja) エポキシ − ジユウゴウタイコウエネルギ−ビ−ムレジストノ ケイセイホウ
JPS6377050A (ja) 三層レジスト用中間層材料およびパタ−ン形成方法
JPS60260946A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPH0314333B2 (en, 2012)
JP2557817B2 (ja) 電離放射線感応ネガ型レジスト
JPH0150894B2 (en, 2012)
JPS61294432A (ja) パタ−ン形成材料及びパタ−ン形成方法
JPS6360898B2 (en, 2012)
JPH0544019B2 (en, 2012)
JPS62108244A (ja) ２層用ポジ型感光性組成物及びパタ−ン形成方法
JPS6219052B2 (en, 2012)