JPS6231802B2 - - Google Patents
Info
- Publication number
- JPS6231802B2 JPS6231802B2 JP56200439A JP20043981A JPS6231802B2 JP S6231802 B2 JPS6231802 B2 JP S6231802B2 JP 56200439 A JP56200439 A JP 56200439A JP 20043981 A JP20043981 A JP 20043981A JP S6231802 B2 JPS6231802 B2 JP S6231802B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- film
- zno
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 59
- 239000010408 film Substances 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000292 calcium oxide Substances 0.000 description 4
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 Co 2 O 3 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56200439A JPS58101403A (ja) | 1981-12-11 | 1981-12-11 | 薄膜バリスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56200439A JPS58101403A (ja) | 1981-12-11 | 1981-12-11 | 薄膜バリスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58101403A JPS58101403A (ja) | 1983-06-16 |
JPS6231802B2 true JPS6231802B2 (enrdf_load_stackoverflow) | 1987-07-10 |
Family
ID=16424304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56200439A Granted JPS58101403A (ja) | 1981-12-11 | 1981-12-11 | 薄膜バリスタの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58101403A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-11 JP JP56200439A patent/JPS58101403A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58101403A (ja) | 1983-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61170005A (ja) | バリスタ | |
JPS5928962B2 (ja) | 厚膜バリスタの製造方法 | |
JPH06295803A (ja) | チップ型サーミスタ及びその製造方法 | |
JPS6231802B2 (enrdf_load_stackoverflow) | ||
JP3109700B2 (ja) | チップ型サーミスタ及びその製造方法 | |
CN114823135B (zh) | 电介质组合物及电子部件 | |
JPH01211901A (ja) | 抵抗被膜形成用組成物 | |
JPS5886702A (ja) | バリスタの製造方法 | |
JP2008218592A (ja) | 薄膜バリスタおよびその製造方法 | |
JPS6266605A (ja) | 薄膜型電圧非直線抵抗素子 | |
JPS60208803A (ja) | 薄膜サ−ミスタの製造方法 | |
CN115036086A (zh) | 热敏电阻烧结体及温度传感器元件 | |
JP3580391B2 (ja) | 導電性チップ型セラミック素子の製造方法 | |
JP2001135501A (ja) | チップ型サーミスタ | |
JPS5912002B2 (ja) | 電圧非直線抵抗器とその製造方法 | |
JPH0992430A (ja) | サージ吸収素子 | |
JPH0992429A (ja) | サージ吸収素子 | |
JPH0288407A (ja) | セラミック超伝導体ペーストおよびその製造方法ならびにセラミック超伝導体配線板およびその製造方法 | |
JP2000068109A (ja) | チップ型サーミスタとその製造方法 | |
JP3036202B2 (ja) | 酸化亜鉛バリスタおよびその製造方法および被覆用結晶化ガラス組成物 | |
JPH02119205A (ja) | 薄膜型電圧非直線抵抗器 | |
WO2012111385A1 (ja) | 正特性サーミスタ | |
JPS59177880A (ja) | 避雷管 | |
JPH02119203A (ja) | 薄膜型電圧非直線抵抗器 | |
JPS6161245B2 (enrdf_load_stackoverflow) |