JPS623096A - 高解離圧化合物半導体単結晶成長方法 - Google Patents

高解離圧化合物半導体単結晶成長方法

Info

Publication number
JPS623096A
JPS623096A JP60138984A JP13898485A JPS623096A JP S623096 A JPS623096 A JP S623096A JP 60138984 A JP60138984 A JP 60138984A JP 13898485 A JP13898485 A JP 13898485A JP S623096 A JPS623096 A JP S623096A
Authority
JP
Japan
Prior art keywords
melt
partition wall
high dissociation
single crystal
dissociation pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60138984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0314800B2 (OSRAM
Inventor
Koichi Sasa
佐々　紘一
Kenji Tomizawa
冨沢　憲治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP60138984A priority Critical patent/JPS623096A/ja
Priority to US06/878,548 priority patent/US4750969A/en
Priority to EP86108675A priority patent/EP0210439B1/en
Priority to DE8686108675T priority patent/DE3669740D1/de
Publication of JPS623096A publication Critical patent/JPS623096A/ja
Publication of JPH0314800B2 publication Critical patent/JPH0314800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60138984A 1985-06-27 1985-06-27 高解離圧化合物半導体単結晶成長方法 Granted JPS623096A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60138984A JPS623096A (ja) 1985-06-27 1985-06-27 高解離圧化合物半導体単結晶成長方法
US06/878,548 US4750969A (en) 1985-06-27 1986-06-25 Method for growing single crystals of dissociative compound semiconductor
EP86108675A EP0210439B1 (en) 1985-06-27 1986-06-25 Method for growing single crystals of dissociative compound semiconductor
DE8686108675T DE3669740D1 (de) 1985-06-27 1986-06-25 Verfahren zur zuechtung von einkristallen einer zersetzbaren halbleiterverbindung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60138984A JPS623096A (ja) 1985-06-27 1985-06-27 高解離圧化合物半導体単結晶成長方法

Publications (2)

Publication Number Publication Date
JPS623096A true JPS623096A (ja) 1987-01-09
JPH0314800B2 JPH0314800B2 (OSRAM) 1991-02-27

Family

ID=15234757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60138984A Granted JPS623096A (ja) 1985-06-27 1985-06-27 高解離圧化合物半導体単結晶成長方法

Country Status (4)

Country Link
US (1) US4750969A (OSRAM)
EP (1) EP0210439B1 (OSRAM)
JP (1) JPS623096A (OSRAM)
DE (1) DE3669740D1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993006264A1 (en) * 1991-09-19 1993-04-01 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256381A (en) * 1984-02-21 1993-10-26 Sumitomo Electric Industries, Ltd. Apparatus for growing single crystals of III-V compound semiconductors
DE3577405D1 (de) * 1984-12-28 1990-06-07 Sumitomo Electric Industries Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung.
US5219632A (en) * 1988-02-24 1993-06-15 Haruhito Shimakura Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals
US6019841A (en) * 1997-03-24 2000-02-01 G.T. Equuipment Technologies Inc. Method and apparatus for synthesis and growth of semiconductor crystals
WO2006068062A1 (ja) * 2004-12-22 2006-06-29 Tokuyama Corporation フッ化金属単結晶体の引上げ装置および該装置を用いたフッ化金属単結晶体の製造方法
US9017629B2 (en) * 2005-09-28 2015-04-28 Ii-Vi Incorporated Intra-cavity gettering of nitrogen in SiC crystal growth
CN116676668B (zh) * 2023-08-03 2023-12-12 北京奇峰蓝达光学科技发展有限公司 一种用于生长大尺寸紫外级氟化钙晶体的提拉法单晶炉

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5964595A (ja) * 1982-10-04 1984-04-12 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶育成装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL104388C (OSRAM) * 1956-11-28
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
GB996008A (en) * 1961-09-29 1965-06-23 Mullard Ltd Improvements in and relating to the manufacture of crystals
NL6917398A (OSRAM) * 1969-03-18 1970-09-22
DE1934369C3 (de) * 1969-07-07 1974-10-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zum Herstellen von Einkristallen aus HI-V Verbindungen
US3615878A (en) * 1970-01-30 1971-10-26 Westinghouse Electric Corp Process for the thermal treatment of a semiconductor material having a volatile component
DE2245250A1 (de) * 1972-09-15 1974-03-21 Philips Patentverwaltung Vorrichtung zum ziehen von kristallen, vorzugsweise einkristallen aus der schmelze
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4496424A (en) * 1982-03-30 1985-01-29 Agency Of Industrial Science & Technology Method for manufacture of III-V compound semiconducting single crystal
JPS5983995A (ja) * 1982-10-29 1984-05-15 Fujitsu Ltd 単結晶の成長方法
JP2529934B2 (ja) * 1984-02-21 1996-09-04 住友電気工業株式会社 単結晶の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5964595A (ja) * 1982-10-04 1984-04-12 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶育成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993006264A1 (en) * 1991-09-19 1993-04-01 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
US5373808A (en) * 1991-09-19 1994-12-20 Mitsubishi Materials Corporation Method and apparatus for producing compound semiconductor single crystal of high decomposition pressure

Also Published As

Publication number Publication date
EP0210439A1 (en) 1987-02-04
DE3669740D1 (de) 1990-04-26
EP0210439B1 (en) 1990-03-21
US4750969A (en) 1988-06-14
JPH0314800B2 (OSRAM) 1991-02-27

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