JPS62293627A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62293627A
JPS62293627A JP61137372A JP13737286A JPS62293627A JP S62293627 A JPS62293627 A JP S62293627A JP 61137372 A JP61137372 A JP 61137372A JP 13737286 A JP13737286 A JP 13737286A JP S62293627 A JPS62293627 A JP S62293627A
Authority
JP
Japan
Prior art keywords
pad
semiconductor device
bonding
film
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61137372A
Other languages
English (en)
Inventor
Yoshimichi Watabe
渡部　良道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61137372A priority Critical patent/JPS62293627A/ja
Publication of JPS62293627A publication Critical patent/JPS62293627A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 発明の詳細な説明 〔産業上の利用分野〕 本発明は半導体装置にかかり、特にプラスチックに封止
された半導体装置に関する。
〔従来の技術〕
従来、半導体装置のボンディングパッドは主としてＡ２
により形成されている。
〔発明が解決しようとする問題点〕
通常、ボンディングパ・ソドは金属細組をボンディング
する為むき出しとなっており、特にプラスチックにより
封止された半導体装置においては、外部からの水分の侵
入により腐食しやすいという欠点がある。
この腐食は不純物が存在しない場合でも陰極側では以下
に示す反応により進行していく。
２　Ａ　ｅ　十６８　”　＝　２　Ａ　ｅ　’　”　＋
　３８２Ａ／３　”　＋３Ｈ２０−、ｌ’　（ＯＨ）３
　＋３８”一方陽極側では不純物が存在しなければ不動
態を形成し腐食は止まるが、Ｃジーなど不純物が存在す
ると ｋ（Ｚ＋４．Ｃｅ−→ＡｅＣｅ４−　＋３ｅ−Ａ、ｅＣ
ｅ４−　＋３Ｈ２０−、ｌ’　（０１−１＞　３　＋３
）］”　＋４ＣＮ− の反応により腐食が生じ半導体装置の信頼性を低下させ
るという問題点がある 本発明の目的は信頼性の向上した半導体装置を提供する
ことにある。
〔問題点を解決するための手段〕
本発明の半導体装置は金属細線をボンディングするボン
ディングパッドを有する半導体装置であって、前記ボン
ディングパッドはボンディングパッドを構成する金属よ
りイオン化傾向の大きな金属との接合を有するものであ
る。
〔実施例〕
次に、本発明の実施例について図面を参照して説明する
。
第１図は本発明の一実施例の断面図である。
第１図において、半導体基板１０上に形成された眉間膜
３上にはＡ＆配線５に接続し金属細線６をボンディング
するＡｅからなるボンディングパッド（以下Ａｅバッド
という）２が形成されている。そしてこのＡｅパッド２
に接してＭｇ膜１が形成されている。両図において４は
保護カバーでありパッド部以外のＡ２配線を保護してい
る。
このように構成された本実施例においては、外部からの
水分の侵入によりパッド部のＡ２はイオン化されＡＪ７
３＋どなるが、Ａｅパッド２に接合されたＭｇ膜１のイ
オン化傾向はＡｅのそれよりも大きいため ２Ａ！！３”　＋３Ｍｇ→２Ａｇ＋３Ｍｇ２＋の反応が
おこり、パッド部のＡ！！の腐食を防止する。
〔発明の効果〕
以上説明したように本発明は水分の侵入により腐食をお
こす恐れのあるボンディングパッドに、ボンディングパ
ッドを構成する金属よりイオン化傾向の大きな金属を接
合させることにより、特にプラスチック封止の半導体装
置の腐食を防止し耐湿性を向上させる効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例の断面図である。 １・・・Ｍｇ膜、２・・・Ａ／パッド、３・・・層間膜
、４・・・カバー膜、５・・・Ａ！配線、６・・・金属
細線、１゜・・・半導体基板。

Claims (1)

    【特許請求の範囲】
  1. 金属細線をボンディングするボンディングパッドを有す
    る半導体装置において、前記ボンディングパッドはボン
    ディングパッドを構成する金属よりイオン化傾向の大き
    な金属との結合を有することを特徴とする半導体装置。
JP61137372A 1986-06-12 1986-06-12 半導体装置 Pending JPS62293627A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61137372A JPS62293627A (ja) 1986-06-12 1986-06-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61137372A JPS62293627A (ja) 1986-06-12 1986-06-12 半導体装置

Publications (1)

Publication Number Publication Date
JPS62293627A true JPS62293627A (ja) 1987-12-21

Family

ID=15197143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61137372A Pending JPS62293627A (ja) 1986-06-12 1986-06-12 半導体装置

Country Status (1)

Country Link
JP (1) JPS62293627A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103232A (ja) * 2008-10-22 2010-05-06 Denso Corp 電子装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187966A (ja) * 1975-01-31 1976-07-31 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187966A (ja) * 1975-01-31 1976-07-31 Hitachi Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103232A (ja) * 2008-10-22 2010-05-06 Denso Corp 電子装置の製造方法

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