JPS6228584B2 - - Google Patents

Info

Publication number
JPS6228584B2
JPS6228584B2 JP54035480A JP3548079A JPS6228584B2 JP S6228584 B2 JPS6228584 B2 JP S6228584B2 JP 54035480 A JP54035480 A JP 54035480A JP 3548079 A JP3548079 A JP 3548079A JP S6228584 B2 JPS6228584 B2 JP S6228584B2
Authority
JP
Japan
Prior art keywords
resin
film
semiconductor substrate
pii
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54035480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55128851A (en
Inventor
Tatsumi Shirasu
Yasunobu Osa
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548079A priority Critical patent/JPS55128851A/ja
Publication of JPS55128851A publication Critical patent/JPS55128851A/ja
Publication of JPS6228584B2 publication Critical patent/JPS6228584B2/ja
Priority to JP21832688A priority patent/JPS6477148A/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP3548079A 1979-03-28 1979-03-28 Semiconductor memory device Granted JPS55128851A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3548079A JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device
JP21832688A JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548079A JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP1233487A Division JPS62174929A (ja) 1987-01-23 1987-01-23 半導体記憶装置の製造方法
JP62012333A Division JPS62181453A (ja) 1987-01-23 1987-01-23 半導体記憶装置
JP63218325A Division JPH01132143A (ja) 1988-09-02 1988-09-02 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS55128851A JPS55128851A (en) 1980-10-06
JPS6228584B2 true JPS6228584B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=12442917

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3548079A Granted JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device
JP21832688A Granted JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP21832688A Granted JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Country Status (1)

Country Link
JP (2) JPS55128851A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140249A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5630746A (en) * 1979-08-22 1981-03-27 Fujitsu Ltd Semiconductor device
JPS577144A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device
JPS5776868A (en) * 1980-10-30 1982-05-14 Fujitsu Ltd Forming method for resin protected film
DE3125284A1 (de) * 1981-06-26 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bauelementen aus halbleiterscheiben
JPS584954A (ja) * 1981-06-30 1983-01-12 Hitachi Ltd 樹脂封止型半導体メモリー装置
JPS5816553A (ja) * 1981-07-22 1983-01-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS58147048A (ja) * 1982-02-25 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
US4468411A (en) * 1982-04-05 1984-08-28 Motorola, Inc. Method for providing alpha particle protection for an integrated circuit die
JPS58223352A (ja) * 1982-06-21 1983-12-24 Matsushita Electric Ind Co Ltd 半導体装置
US4653175A (en) * 1984-02-09 1987-03-31 Fairchild Semiconductor Corporation Semiconductor structure having alpha particle resistant film and method of making the same
JPS62204575A (ja) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
CA2021682C (en) * 1989-07-21 1995-01-03 Yukio Yamaguchi Chip-carrier with alpha ray shield
US5264726A (en) * 1989-07-21 1993-11-23 Nec Corporation Chip-carrier
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166776A (ja) * 1974-12-06 1976-06-09 Hitachi Ltd Koshuhahandotaisochi oyobi sonoseizohoho
JPS5226989A (en) * 1975-08-22 1977-02-28 Chiyoda Shigyo Kk Paper bag trnsferring method for heavy packaging paper sewing machine
JPS53142375A (en) * 1977-05-18 1978-12-12 Babcock Hitachi Kk Rotary kiln

Also Published As

Publication number Publication date
JPS55128851A (en) 1980-10-06
JPS6477148A (en) 1989-03-23
JPH0546101B2 (enrdf_load_stackoverflow) 1993-07-13

Similar Documents

Publication Publication Date Title
JPS6228584B2 (enrdf_load_stackoverflow)
Mukai et al. Planar multilevel interconnection technology employing a polyimide
GB2039145A (en) Semiconductor device shielding
JPS58154256A (ja) 半導体装置
JPS6022497B2 (ja) 半導体装置
JPH0252427B2 (enrdf_load_stackoverflow)
JPS6330785B2 (enrdf_load_stackoverflow)
JPH0544189B2 (enrdf_load_stackoverflow)
JPS6330786B2 (enrdf_load_stackoverflow)
JPS6136709B2 (enrdf_load_stackoverflow)
US4702796A (en) Method for fabricting a semiconductor device
JPH0131308B2 (enrdf_load_stackoverflow)
JPS61241932A (ja) 半導体装置およびその製造方法
Milek Silicon Nitride for Microelectronic Applications: Part 2 Applications and Devices
JPS627700B2 (enrdf_load_stackoverflow)
CN118213372B (zh) 16位透明锁存器
JPS6314477A (ja) 半導体装置
JPS6132810B2 (enrdf_load_stackoverflow)
JPS58116755A (ja) 半導体装置
JPS6257095B2 (enrdf_load_stackoverflow)
KR100260551B1 (ko) 소프트 에러율을 감소시킨 반도체 장치 및 그 제조방법
JPH0389549A (ja) 半導体装置
JPS6257244A (ja) 半導体装置
JPS6150348A (ja) 半導体装置の製造方法
JP3334760B2 (ja) 半導体装置の製造方法