JPS6227547B2 - - Google Patents
Info
- Publication number
- JPS6227547B2 JPS6227547B2 JP53100749A JP10074978A JPS6227547B2 JP S6227547 B2 JPS6227547 B2 JP S6227547B2 JP 53100749 A JP53100749 A JP 53100749A JP 10074978 A JP10074978 A JP 10074978A JP S6227547 B2 JPS6227547 B2 JP S6227547B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- semiconductor
- deposited
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10074978A JPS5527645A (en) | 1978-08-17 | 1978-08-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10074978A JPS5527645A (en) | 1978-08-17 | 1978-08-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527645A JPS5527645A (en) | 1980-02-27 |
| JPS6227547B2 true JPS6227547B2 (enrdf_load_stackoverflow) | 1987-06-15 |
Family
ID=14282171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10074978A Granted JPS5527645A (en) | 1978-08-17 | 1978-08-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527645A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4518981A (en) * | 1981-11-12 | 1985-05-21 | Advanced Micro Devices, Inc. | Merged platinum silicide fuse and Schottky diode and method of manufacture thereof |
| JPH0638424B2 (ja) * | 1986-07-31 | 1994-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5844297A (en) * | 1995-09-26 | 1998-12-01 | Symbios, Inc. | Antifuse device for use on a field programmable interconnect chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54106174A (en) * | 1978-02-08 | 1979-08-20 | Nec Corp | Semiconductor device and its manufacture |
-
1978
- 1978-08-17 JP JP10074978A patent/JPS5527645A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5527645A (en) | 1980-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3323956A (en) | Method of manufacturing semiconductor devices | |
| US3617824A (en) | Mos device with a metal-silicide gate | |
| US4155155A (en) | Method of manufacturing power semiconductors with pressed contacts | |
| US3664874A (en) | Tungsten contacts on silicon substrates | |
| US5131956A (en) | Photovoltaic semiconductor device | |
| US4005468A (en) | Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection | |
| US4695869A (en) | GAAS semiconductor device | |
| JPS6227547B2 (enrdf_load_stackoverflow) | ||
| JP2687017B2 (ja) | ショットキバリア半導体装置 | |
| JPS6024074A (ja) | ヒ化ガリウム半導体デバイスおよびその製造方法 | |
| CA1127322A (en) | Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum | |
| JP3340648B2 (ja) | 半導体装置の電極形成方法 | |
| US3254389A (en) | Method of making a ceramic supported semiconductor device | |
| JP2708798B2 (ja) | 炭化ケイ素の電極形成方法 | |
| US3253320A (en) | Method of making semi-conductor devices with plated area | |
| US5386138A (en) | Semiconductor device with diodes connected in series | |
| JPS58123724A (ja) | 半導体装置 | |
| JP3142318B2 (ja) | 半導体装置 | |
| JP2754693B2 (ja) | メッキ電極の製造方法 | |
| US3869703A (en) | Semiconductor device having an improved supply lead support | |
| JPS6130302Y2 (enrdf_load_stackoverflow) | ||
| US3219890A (en) | Semiconductor barrier-layer device and terminal structure thereon | |
| JPS6169122A (ja) | 半導体装置の製造方法 | |
| JPH0320898B2 (enrdf_load_stackoverflow) | ||
| TW381330B (en) | Method of forming cooling system on wafer back |