JPS6227529B2 - - Google Patents

Info

Publication number
JPS6227529B2
JPS6227529B2 JP55150222A JP15022280A JPS6227529B2 JP S6227529 B2 JPS6227529 B2 JP S6227529B2 JP 55150222 A JP55150222 A JP 55150222A JP 15022280 A JP15022280 A JP 15022280A JP S6227529 B2 JPS6227529 B2 JP S6227529B2
Authority
JP
Japan
Prior art keywords
boron
diffusion
diffusion source
temperature above
alcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55150222A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5773931A (en
Inventor
Akira Hashimoto
Muneo Nakayama
Toshihiro Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Denshi Kagaku KK
Original Assignee
Tokyo Denshi Kagaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Denshi Kagaku KK filed Critical Tokyo Denshi Kagaku KK
Priority to JP55150222A priority Critical patent/JPS5773931A/ja
Publication of JPS5773931A publication Critical patent/JPS5773931A/ja
Publication of JPS6227529B2 publication Critical patent/JPS6227529B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
JP55150222A 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby Granted JPS5773931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150222A JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150222A JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Publications (2)

Publication Number Publication Date
JPS5773931A JPS5773931A (en) 1982-05-08
JPS6227529B2 true JPS6227529B2 (https=) 1987-06-15

Family

ID=15492198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150222A Granted JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Country Status (1)

Country Link
JP (1) JPS5773931A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2578721A2 (en) 2011-10-04 2013-04-10 Shin-Etsu Chemical Co., Ltd. Coating fluid for boron diffusion

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP4541243B2 (ja) * 2005-07-22 2010-09-08 日本合成化学工業株式会社 ホウ素拡散用塗布液
JP2013038411A (ja) * 2011-07-14 2013-02-21 Nippon Synthetic Chem Ind Co Ltd:The 半導体の製造方法
JP6022243B2 (ja) * 2011-09-12 2016-11-09 東京応化工業株式会社 拡散剤組成物および不純物拡散層の形成方法
CN108257857A (zh) * 2018-01-11 2018-07-06 华东理工大学 一种多元醇硼酸酯络合物硼扩散源及其制备方法
CN113024700B (zh) * 2021-03-08 2022-10-14 常州时创能源股份有限公司 硅片硼扩散用可喷涂硼源及其应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2578721A2 (en) 2011-10-04 2013-04-10 Shin-Etsu Chemical Co., Ltd. Coating fluid for boron diffusion
US9181615B2 (en) 2011-10-04 2015-11-10 Shin-Etsu Chemical Co., Ltd. Coating fluid for boron diffusion

Also Published As

Publication number Publication date
JPS5773931A (en) 1982-05-08

Similar Documents

Publication Publication Date Title
US4277525A (en) Liquid compositions for forming silica coating films
JP2004161601A5 (https=)
EP0024057A1 (en) Single step formation of PN junction in silicon cell and coating thereon
CN1343376A (zh) 用于生产半导体p,p+ 和n,n+区的掺杂糊剂
US4571366A (en) Process for forming a doped oxide film and doped semiconductor
CN1328697A (zh) 蚀刻溶液,蚀刻制品和制造蚀刻制品的方法
JP3522940B2 (ja) ホウ素拡散用塗布液
CN113169247A (zh) p型杂质扩散组合物及其制造方法、使用其的半导体元件的制造方法和太阳能电池
JPS6227529B2 (https=)
GB1297857A (https=)
TW201218252A (en) Diffusion agent composition and method of forming impurity diffusion layer
US4793862A (en) Silica-based antimony containing film-forming composition
JP2639591B2 (ja) ドーパントフィルム及びそれを使用した不純物拡散方法
JPWO2021060182A5 (https=)
US4152286A (en) Composition and method for forming a doped oxide film
US3837873A (en) Compositions for use in forming a doped oxide film
JP3519847B2 (ja) ホウ素拡散用塗布液
JP2005123431A (ja) 液状不純物源材料及びこれを使用した半導体装置の製造方法
JPS5932054B2 (ja) ド−パントフィルムとその使用方法
JPH0485821A (ja) ホウ素拡散ソースおよびホウ素拡散方法
JP2016506629A (ja) シリコンウェハから不純物をゲッタリングするための酸化物媒体
DE602005003163T2 (de) Siliciumhaltige Verbindung, Zusammensetzung und Isolierfilm
Kuisl Doped silicon dioxide films from spin-on solutions
JPH0355828A (ja) 半導体素子用不純物拡散液およびこれを用いた不純物拡散層の製造法
JPS5846845B2 (ja) 固体拡散法およびド−プ用組成物