JPS5773931A - Boron-diffusing source for semiconductor element and diffusing method thereby - Google Patents

Boron-diffusing source for semiconductor element and diffusing method thereby

Info

Publication number
JPS5773931A
JPS5773931A JP55150222A JP15022280A JPS5773931A JP S5773931 A JPS5773931 A JP S5773931A JP 55150222 A JP55150222 A JP 55150222A JP 15022280 A JP15022280 A JP 15022280A JP S5773931 A JPS5773931 A JP S5773931A
Authority
JP
Japan
Prior art keywords
boric acid
diffusion
added
temperature
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55150222A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227529B2 (https=
Inventor
Akira Hashimoto
Muneo Nakayama
Toshihiro Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO DENSHI KAGAKU KABUSHIKI
Tokyo Denshi Kagaku KK
Original Assignee
TOKYO DENSHI KAGAKU KABUSHIKI
Tokyo Denshi Kagaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO DENSHI KAGAKU KABUSHIKI, Tokyo Denshi Kagaku KK filed Critical TOKYO DENSHI KAGAKU KABUSHIKI
Priority to JP55150222A priority Critical patent/JPS5773931A/ja
Publication of JPS5773931A publication Critical patent/JPS5773931A/ja
Publication of JPS6227529B2 publication Critical patent/JPS6227529B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
JP55150222A 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby Granted JPS5773931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150222A JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150222A JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Publications (2)

Publication Number Publication Date
JPS5773931A true JPS5773931A (en) 1982-05-08
JPS6227529B2 JPS6227529B2 (https=) 1987-06-15

Family

ID=15492198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150222A Granted JPS5773931A (en) 1980-10-28 1980-10-28 Boron-diffusing source for semiconductor element and diffusing method thereby

Country Status (1)

Country Link
JP (1) JPS5773931A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP2007035719A (ja) * 2005-07-22 2007-02-08 Nippon Synthetic Chem Ind Co Ltd:The ホウ素拡散用塗布液
JP2013038411A (ja) * 2011-07-14 2013-02-21 Nippon Synthetic Chem Ind Co Ltd:The 半導体の製造方法
US20140227865A1 (en) * 2011-09-12 2014-08-14 Tokyo Ohka Kogyo Co., Ltd. Diffusion-agent composition, method for forming impurity-diffusion layer, and solar cell
CN108257857A (zh) * 2018-01-11 2018-07-06 华东理工大学 一种多元醇硼酸酯络合物硼扩散源及其制备方法
CN113024700A (zh) * 2021-03-08 2021-06-25 常州时创能源股份有限公司 硅片硼扩散用可喷涂硼源及其应用

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093563A (ja) 2011-10-04 2013-05-16 Shin Etsu Chem Co Ltd ホウ素拡散用塗布剤

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP2007035719A (ja) * 2005-07-22 2007-02-08 Nippon Synthetic Chem Ind Co Ltd:The ホウ素拡散用塗布液
JP2013038411A (ja) * 2011-07-14 2013-02-21 Nippon Synthetic Chem Ind Co Ltd:The 半導体の製造方法
US20140227865A1 (en) * 2011-09-12 2014-08-14 Tokyo Ohka Kogyo Co., Ltd. Diffusion-agent composition, method for forming impurity-diffusion layer, and solar cell
US9048175B2 (en) * 2011-09-12 2015-06-02 Tokyo Ohka Kogyo Co., Ltd. Diffusion-agent composition for forming an impurity-diffusing agent layer on a semiconductor substrate
CN108257857A (zh) * 2018-01-11 2018-07-06 华东理工大学 一种多元醇硼酸酯络合物硼扩散源及其制备方法
CN113024700A (zh) * 2021-03-08 2021-06-25 常州时创能源股份有限公司 硅片硼扩散用可喷涂硼源及其应用

Also Published As

Publication number Publication date
JPS6227529B2 (https=) 1987-06-15

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